The phase equilibrium of the Ag2SnS3–ZnS pseudobinary system for the growth of Ag2ZnSnS4 (AZTS) crystals was investigated using the equilibration-quenching technique. The growth mechanism of AZTS follows the peritectic reaction liquid phase + ZnS phase ↔ AZTS phase, which occurs at a composition of ~20 mol% ZnS and a temperature of approximately 700 °C. The AZTS polycrystalline sample was obtained from the stoichiometric melt growth. The kesterite structure of the AZTS sample without secondary phases was identified by a combination of X-ray diffraction and Raman spectroscopy measurements. The electron carrier concentration and conductivity, determined by the Hall effect measurement, were (3.0–6.3) × 1015 cm−3 and (5.6–9.2) × 10−4 S/cm, respectively. The slightly Zn-rich and S-poor composition led to n-type conduction in the AZTS because of the dominant Zn antisites on Ag (ZnAg) and S vacancy (VS) defects. Therefore, this study can make a significant contribution to the research and application of AZTS materials.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry