TY - JOUR
T1 - Phosphine oxide monolayers on SiO2 surfaces
AU - Yerushalmi, Roie
AU - Ho, Johnny C.
AU - Fan, Zhiyong
AU - Javey, Ali
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/5/26
Y1 - 2008/5/26
N2 - (Figure Presented) Getting a grip: H-bond formation is shown to be the main mode of interaction for monolayer formation of phosphine oxides on SiO 2 substrates (see images), with covalent reaction involved to a lesser extent. In contrast to the situation with the more widely studied polar phosphonic acids, formation of these monolayers is self-limiting. The results may have important implications for many applications based on phosphine oxide monolayers.
AB - (Figure Presented) Getting a grip: H-bond formation is shown to be the main mode of interaction for monolayer formation of phosphine oxides on SiO 2 substrates (see images), with covalent reaction involved to a lesser extent. In contrast to the situation with the more widely studied polar phosphonic acids, formation of these monolayers is self-limiting. The results may have important implications for many applications based on phosphine oxide monolayers.
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U2 - 10.1002/anie.200800737
DO - 10.1002/anie.200800737
M3 - Article
C2 - 18461577
AN - SCOPUS:53549105282
SN - 1433-7851
VL - 47
SP - 4440
EP - 4442
JO - Angewandte Chemie - International Edition
JF - Angewandte Chemie - International Edition
IS - 23
ER -