Phosphorus doping into 4H-SiC by irradiation of excimer laser in phosphoric solution

Koji Nishi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We developed a method to dope phosphorus into 4H-SiC by irradiating excimer laser light to 4H-SiC immersed in phosphoric acid solution. A KrF excimer laser was used. The surface is slightly ablated by the laser irradiation. However, no amorphous layer is generated near the surface. Phosphorous is introduced at a concentration of over 1020 cm-3 near the crystal surface. The laser irradiation in phosphoric acid solution significantly improves the ohmic contact characteristic between metal and 4H-SiC. Hall effect measurement shows that the irradiation produces an n-type layer at the surface whose sheet carrier concentration is 2:25-1012 cm-2. In addition, we produce a pn junction by irradiating p-type 4H-SiC. The pn junction shows a rectifying characteristic whose on/off ratio is over 8 decades and ideality factor is 1.06.

Original languageEnglish
Article number06GF02
JournalJapanese Journal of Applied Physics
Volume52
Issue number6 PART 2
DOIs
Publication statusPublished - Jun 1 2013

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Excimer lasers
excimer lasers
phosphorus
Phosphorus
phosphoric acid
Doping (additives)
Irradiation
irradiation
Phosphoric acid
Laser beam effects
crystal surfaces
lasers
Hall effect
Ohmic contacts
electric contacts
Carrier concentration
metals
Crystals
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Phosphorus doping into 4H-SiC by irradiation of excimer laser in phosphoric solution. / Nishi, Koji; Ikeda, Akihiro; Ikenoue, Hiroshi; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Vol. 52, No. 6 PART 2, 06GF02, 01.06.2013.

Research output: Contribution to journalArticle

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