Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Akihiro Ikeda; Koji Nishi; Hiroshi Ikenoue; Tanemasa Asano

doi:10.1063/1.4790621

Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano

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Abstract

Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 10²⁰/cm ³ without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

Original language	English
Article number	052104
Journal	Applied Physics Letters
Volume	102
Issue number	5
DOIs	https://doi.org/10.1063/1.4790621
Publication status	Published - Feb 4 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4790621

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title = "Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation",

abstract = "Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm 3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.",

author = "Akihiro Ikeda and Koji Nishi and Hiroshi Ikenoue and Tanemasa Asano",

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T1 - Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

AU - Ikeda, Akihiro

AU - Nishi, Koji

AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

PY - 2013/2/4

Y1 - 2013/2/4

N2 - Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm 3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

AB - Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm 3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

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DO - 10.1063/1.4790621

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Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Abstract

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