Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm 3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)