Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm 3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

Original languageEnglish
Article number052104
JournalApplied Physics Letters
Volume102
Issue number5
DOIs
Publication statusPublished - Feb 4 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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