Photo-electrochemical properties of titanium dioxide thin filmsprepared by reactive RF sputtering method

Makoto Arita, Yu Tabata, Hiroki Sakamoto, Qixin Guo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The photo-electrochemical properties of photocatalytic titanium dioxide thin filmsobtained by reactive RF magnetron sputtering were investigated. The pressure during the sputteringdeposition affected the photocatalytic activity and photo-induced hydrophilicity, and at 2 Pa thehighest activities were observed. The photocurrent under ultraviolet light illumination corresponded tothe photo-induced activities of the films. It is suggested that the band bending near the surface is oneof the most crucial factors determines the activities of photo-induced behavior of the titanium dioxidethin films.

Original languageEnglish
Title of host publicationAdvanced Materials Science and Technology
Pages248-251
Number of pages4
DOIs
Publication statusPublished - Apr 10 2013
Event8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, Japan
Duration: Aug 1 2012Aug 4 2012

Publication series

NameMaterials Science Forum
Volume750
ISSN (Print)0255-5476

Other

Other8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
CountryJapan
CityFukuoka City
Period8/1/128/4/12

Fingerprint

Electrochemical properties
titanium oxides
Titanium dioxide
Sputtering
sputtering
Hydrophilicity
Titanium
Photocurrents
Magnetron sputtering
Lighting
ultraviolet radiation
photocurrents
magnetron sputtering
titanium
illumination
titanium dioxide
Ultraviolet Rays

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Arita, M., Tabata, Y., Sakamoto, H., & Guo, Q. (2013). Photo-electrochemical properties of titanium dioxide thin filmsprepared by reactive RF sputtering method. In Advanced Materials Science and Technology (pp. 248-251). (Materials Science Forum; Vol. 750). https://doi.org/10.4028/www.scientific.net/MSF.750.248

Photo-electrochemical properties of titanium dioxide thin filmsprepared by reactive RF sputtering method. / Arita, Makoto; Tabata, Yu; Sakamoto, Hiroki; Guo, Qixin.

Advanced Materials Science and Technology. 2013. p. 248-251 (Materials Science Forum; Vol. 750).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arita, M, Tabata, Y, Sakamoto, H & Guo, Q 2013, Photo-electrochemical properties of titanium dioxide thin filmsprepared by reactive RF sputtering method. in Advanced Materials Science and Technology. Materials Science Forum, vol. 750, pp. 248-251, 8th International Forum on Advanced Materials Science and Technology, IFAMST 2012, Fukuoka City, Japan, 8/1/12. https://doi.org/10.4028/www.scientific.net/MSF.750.248
Arita M, Tabata Y, Sakamoto H, Guo Q. Photo-electrochemical properties of titanium dioxide thin filmsprepared by reactive RF sputtering method. In Advanced Materials Science and Technology. 2013. p. 248-251. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.750.248
Arita, Makoto ; Tabata, Yu ; Sakamoto, Hiroki ; Guo, Qixin. / Photo-electrochemical properties of titanium dioxide thin filmsprepared by reactive RF sputtering method. Advanced Materials Science and Technology. 2013. pp. 248-251 (Materials Science Forum).
@inproceedings{87f6c614aad54d61b415f135f33da347,
title = "Photo-electrochemical properties of titanium dioxide thin filmsprepared by reactive RF sputtering method",
abstract = "The photo-electrochemical properties of photocatalytic titanium dioxide thin filmsobtained by reactive RF magnetron sputtering were investigated. The pressure during the sputteringdeposition affected the photocatalytic activity and photo-induced hydrophilicity, and at 2 Pa thehighest activities were observed. The photocurrent under ultraviolet light illumination corresponded tothe photo-induced activities of the films. It is suggested that the band bending near the surface is oneof the most crucial factors determines the activities of photo-induced behavior of the titanium dioxidethin films.",
author = "Makoto Arita and Yu Tabata and Hiroki Sakamoto and Qixin Guo",
year = "2013",
month = "4",
day = "10",
doi = "10.4028/www.scientific.net/MSF.750.248",
language = "English",
isbn = "9783037856604",
series = "Materials Science Forum",
pages = "248--251",
booktitle = "Advanced Materials Science and Technology",

}

TY - GEN

T1 - Photo-electrochemical properties of titanium dioxide thin filmsprepared by reactive RF sputtering method

AU - Arita, Makoto

AU - Tabata, Yu

AU - Sakamoto, Hiroki

AU - Guo, Qixin

PY - 2013/4/10

Y1 - 2013/4/10

N2 - The photo-electrochemical properties of photocatalytic titanium dioxide thin filmsobtained by reactive RF magnetron sputtering were investigated. The pressure during the sputteringdeposition affected the photocatalytic activity and photo-induced hydrophilicity, and at 2 Pa thehighest activities were observed. The photocurrent under ultraviolet light illumination corresponded tothe photo-induced activities of the films. It is suggested that the band bending near the surface is oneof the most crucial factors determines the activities of photo-induced behavior of the titanium dioxidethin films.

AB - The photo-electrochemical properties of photocatalytic titanium dioxide thin filmsobtained by reactive RF magnetron sputtering were investigated. The pressure during the sputteringdeposition affected the photocatalytic activity and photo-induced hydrophilicity, and at 2 Pa thehighest activities were observed. The photocurrent under ultraviolet light illumination corresponded tothe photo-induced activities of the films. It is suggested that the band bending near the surface is oneof the most crucial factors determines the activities of photo-induced behavior of the titanium dioxidethin films.

UR - http://www.scopus.com/inward/record.url?scp=84875819870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875819870&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.750.248

DO - 10.4028/www.scientific.net/MSF.750.248

M3 - Conference contribution

AN - SCOPUS:84875819870

SN - 9783037856604

T3 - Materials Science Forum

SP - 248

EP - 251

BT - Advanced Materials Science and Technology

ER -