Photoelectrochemical properties of anodic oxide film on niobium

Makoto Arita, Y. Hayashi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Photoelectrochemical properties of niobium oxide film formed by anodic oxidation in a saturated boric acid solution have been studied. The oxide film is considered as an n-type semiconductor from the polarization curves measured in 0.5N sulfuric acid solution. Anodic photocurrent is observed when the oxide film is illuminated by an ultraviolet light while it is anodically polarized. From the spectrum of the photocurrent of the film, the band gap energy of the oxide is determined to be about 3.3 eV. When the specimen is polarized at a cathodic potential before the photocurrent measurements, the film shows an additional photoresponse for the light with longer wavelength than that corresponds to the band gap energy. This can be explained by the formation of new electron levels in the band gap by cathodic hydrogen charging.

Original languageEnglish
Pages (from-to)233-237
Number of pages5
JournalMaterials Transactions, JIM
Volume35
Issue number4
DOIs
Publication statusPublished - Jan 1 1994

Fingerprint

Niobium
Photocurrents
niobium
Oxide films
photocurrents
oxide films
Energy gap
Niobium oxide
niobium oxides
boric acids
Boric acid
n-type semiconductors
Anodic oxidation
sulfuric acid
Sulfuric acid
ultraviolet radiation
Oxides
charging
Hydrogen
Polarization

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Photoelectrochemical properties of anodic oxide film on niobium. / Arita, Makoto; Hayashi, Y.

In: Materials Transactions, JIM, Vol. 35, No. 4, 01.01.1994, p. 233-237.

Research output: Contribution to journalArticle

@article{4b3999f6b03a44e6a292f48a90ec6ed9,
title = "Photoelectrochemical properties of anodic oxide film on niobium",
abstract = "Photoelectrochemical properties of niobium oxide film formed by anodic oxidation in a saturated boric acid solution have been studied. The oxide film is considered as an n-type semiconductor from the polarization curves measured in 0.5N sulfuric acid solution. Anodic photocurrent is observed when the oxide film is illuminated by an ultraviolet light while it is anodically polarized. From the spectrum of the photocurrent of the film, the band gap energy of the oxide is determined to be about 3.3 eV. When the specimen is polarized at a cathodic potential before the photocurrent measurements, the film shows an additional photoresponse for the light with longer wavelength than that corresponds to the band gap energy. This can be explained by the formation of new electron levels in the band gap by cathodic hydrogen charging.",
author = "Makoto Arita and Y. Hayashi",
year = "1994",
month = "1",
day = "1",
doi = "10.2320/matertrans1989.35.233",
language = "English",
volume = "35",
pages = "233--237",
journal = "Materials Transactions",
issn = "0916-1821",
publisher = "The Japan Institute of Metals and Materials",
number = "4",

}

TY - JOUR

T1 - Photoelectrochemical properties of anodic oxide film on niobium

AU - Arita, Makoto

AU - Hayashi, Y.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Photoelectrochemical properties of niobium oxide film formed by anodic oxidation in a saturated boric acid solution have been studied. The oxide film is considered as an n-type semiconductor from the polarization curves measured in 0.5N sulfuric acid solution. Anodic photocurrent is observed when the oxide film is illuminated by an ultraviolet light while it is anodically polarized. From the spectrum of the photocurrent of the film, the band gap energy of the oxide is determined to be about 3.3 eV. When the specimen is polarized at a cathodic potential before the photocurrent measurements, the film shows an additional photoresponse for the light with longer wavelength than that corresponds to the band gap energy. This can be explained by the formation of new electron levels in the band gap by cathodic hydrogen charging.

AB - Photoelectrochemical properties of niobium oxide film formed by anodic oxidation in a saturated boric acid solution have been studied. The oxide film is considered as an n-type semiconductor from the polarization curves measured in 0.5N sulfuric acid solution. Anodic photocurrent is observed when the oxide film is illuminated by an ultraviolet light while it is anodically polarized. From the spectrum of the photocurrent of the film, the band gap energy of the oxide is determined to be about 3.3 eV. When the specimen is polarized at a cathodic potential before the photocurrent measurements, the film shows an additional photoresponse for the light with longer wavelength than that corresponds to the band gap energy. This can be explained by the formation of new electron levels in the band gap by cathodic hydrogen charging.

UR - http://www.scopus.com/inward/record.url?scp=0028404967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028404967&partnerID=8YFLogxK

U2 - 10.2320/matertrans1989.35.233

DO - 10.2320/matertrans1989.35.233

M3 - Article

VL - 35

SP - 233

EP - 237

JO - Materials Transactions

JF - Materials Transactions

SN - 0916-1821

IS - 4

ER -