Photoenhanced chemical vapor deposition of zinc phosphide

Yoshimine Kato, Shoichi Kurita, Toshikazu Suda

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Thin films of zinc, phosphorus, and zinc phosphide (Zn3P 2) have been deposited by photodissociation of dimethylzinc (DMZ) and phosphine (PH3) on various substrates using a low-pressure mercury lamp as a light source. The substrate temperature was varied between room temperature and 250 °C. The deposition rates of the films were significantly affected by the UV light intensity, the density of gases, the PH 3/DMZ molar ratio, and the substrate temperature. Zn 3P2 microcrystallites were grown on Si(111) substrates at a temperature of 250 °C. Those crystallites were studied by using a scanning electron microscope and reflection high-energy electron diffraction. A very weak photoluminescence spectrum at 808 nm (1.53 eV) was observed at room temperature.

Original languageEnglish
Pages (from-to)3733-3739
Number of pages7
JournalJournal of Applied Physics
Volume62
Issue number9
DOIs
Publication statusPublished - Dec 1 1987

Fingerprint

phosphides
zinc
vapor deposition
mercury lamps
room temperature
phosphines
photodissociation
high energy electrons
luminous intensity
crystallites
temperature
phosphorus
light sources
electron diffraction
low pressure
electron microscopes
photoluminescence
scanning
thin films
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Photoenhanced chemical vapor deposition of zinc phosphide. / Kato, Yoshimine; Kurita, Shoichi; Suda, Toshikazu.

In: Journal of Applied Physics, Vol. 62, No. 9, 01.12.1987, p. 3733-3739.

Research output: Contribution to journalArticle

Kato, Yoshimine ; Kurita, Shoichi ; Suda, Toshikazu. / Photoenhanced chemical vapor deposition of zinc phosphide. In: Journal of Applied Physics. 1987 ; Vol. 62, No. 9. pp. 3733-3739.
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