Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Dong Wang, Hiroshi Nakashima, Koji Matsumoto, Masahiko Nakamae

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions. The PL signals of wafers with 13% and 18% Ge fractions are deep-level free, implying high wafer qualities. A defect-related broad PL signal could be observed for a wafer with 25% Ge fraction. The dependences of the PL signals as well as the wafer's qualities on Ge fractions were discussed in detail.

Original languageEnglish
Article number251928
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number25
DOIs
Publication statusPublished - 2005

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insulators
wafers
photoluminescence
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions. / Wang, Dong; Nakashima, Hiroshi; Matsumoto, Koji; Nakamae, Masahiko.

In: Applied Physics Letters, Vol. 87, No. 25, 251928, 2005, p. 1-3.

Research output: Contribution to journalArticle

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