Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process

Dong Wang, Seiichiro Li, Hiroshi Nakashima, Ken Ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Crystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5°C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased with an increase in the annealing temperature. For the annealed wafers, defect-related PL signals were observed at around 0.82, 0.88, 0.95, and 1.0 eV, which varied according to the annealing temperature and the SiGe thickness. They were also correlated to dislocation-related defects by transmission electron microscopy.

Original languageEnglish
Article number041916
JournalApplied Physics Letters
Volume89
Issue number4
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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