Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated film

Reiji Hattori, Takeshi Sugano, Junji Shirafuji

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Photoluminescence (PL) and excitation (EX) spectra in epitaxially grown poly(dimethylsilane) (PDMS) films prepared by evaporation have been measured. The epitaxial films are prepared onto mechanically oriented poly(tetrafluoroethylene) (PTFE) layer or onto cleaved surface of alkali halide crystals. The EX peak is located in the lower photon energy tail of the broad absorption (ABS) band; this is explained in terms of the occurrence of energy transfer from short delocalized regions to the longest delocalized regions in silicon main chain and the extremely poor transfer probability. The epitaxially grown films show higher photoluminescence intensity possibly because the existence of an increased number of delocalized regions.

Original languageEnglish
Pages (from-to)472-475
Number of pages4
JournalApplied Surface Science
Volume113-114
DOIs
Publication statusPublished - Jan 1 1997
Externally publishedYes

Fingerprint

Silicon
Photoluminescence
Alkali halides
Epitaxial films
Polytetrafluoroethylenes
Energy transfer
Absorption spectra
Evaporation
Photons
Crystals

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated film. / Hattori, Reiji; Sugano, Takeshi; Shirafuji, Junji.

In: Applied Surface Science, Vol. 113-114, 01.01.1997, p. 472-475.

Research output: Contribution to journalArticle

Hattori, Reiji ; Sugano, Takeshi ; Shirafuji, Junji. / Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated film. In: Applied Surface Science. 1997 ; Vol. 113-114. pp. 472-475.
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