Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation

Kohei Fukumi, Akiyoshi Chayahara, Kenji Ohora, Naoyuki Kitamura, Yuji Horino, Kanenaga Fujii, Masaki Makihara, Junji Hayakaya, Nobuhito Ohno

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

2 MeV Cu+ ions were implanted in silica glass at doses from 1×1015 to 1×1017 ions/cm2. Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1×1016 Cu+ ions/cm2 in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume149
Issue number1-2
DOIs
Publication statusPublished - Jan 3 1999

Fingerprint

silica glass
Fused silica
Ion implantation
ion implantation
Photoluminescence
photoluminescence
Ions
ions
implantation
copper
dosage
Copper
oxygen ions
heat treatment
Heat treatment
Oxygen

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation. / Fukumi, Kohei; Chayahara, Akiyoshi; Ohora, Kenji; Kitamura, Naoyuki; Horino, Yuji; Fujii, Kanenaga; Makihara, Masaki; Hayakaya, Junji; Ohno, Nobuhito.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 149, No. 1-2, 03.01.1999, p. 77-80.

Research output: Contribution to journalArticle

Fukumi, Kohei ; Chayahara, Akiyoshi ; Ohora, Kenji ; Kitamura, Naoyuki ; Horino, Yuji ; Fujii, Kanenaga ; Makihara, Masaki ; Hayakaya, Junji ; Ohno, Nobuhito. / Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1999 ; Vol. 149, No. 1-2. pp. 77-80.
@article{c623c1bf9c69423e99116eccd4d024ad,
title = "Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation",
abstract = "2 MeV Cu+ ions were implanted in silica glass at doses from 1×1015 to 1×1017 ions/cm2. Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1×1016 Cu+ ions/cm2 in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass.",
author = "Kohei Fukumi and Akiyoshi Chayahara and Kenji Ohora and Naoyuki Kitamura and Yuji Horino and Kanenaga Fujii and Masaki Makihara and Junji Hayakaya and Nobuhito Ohno",
year = "1999",
month = "1",
day = "3",
doi = "10.1016/S0168-583X(98)00729-0",
language = "English",
volume = "149",
pages = "77--80",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation

AU - Fukumi, Kohei

AU - Chayahara, Akiyoshi

AU - Ohora, Kenji

AU - Kitamura, Naoyuki

AU - Horino, Yuji

AU - Fujii, Kanenaga

AU - Makihara, Masaki

AU - Hayakaya, Junji

AU - Ohno, Nobuhito

PY - 1999/1/3

Y1 - 1999/1/3

N2 - 2 MeV Cu+ ions were implanted in silica glass at doses from 1×1015 to 1×1017 ions/cm2. Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1×1016 Cu+ ions/cm2 in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass.

AB - 2 MeV Cu+ ions were implanted in silica glass at doses from 1×1015 to 1×1017 ions/cm2. Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1×1016 Cu+ ions/cm2 in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass.

UR - http://www.scopus.com/inward/record.url?scp=0033518353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033518353&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(98)00729-0

DO - 10.1016/S0168-583X(98)00729-0

M3 - Article

AN - SCOPUS:0033518353

VL - 149

SP - 77

EP - 80

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

ER -