Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation

Kohei Fukumi, Akiyoshi Chayahara, Kenji Ohora, Naoyuki Kitamura, Yuji Horino, Kanenaga Fujii, Masaki Makihara, Junji Hayakaya, Nobuhito Ohno

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

2 MeV Cu+ ions were implanted in silica glass at doses from 1×1015 to 1×1017 ions/cm2. Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1×1016 Cu+ ions/cm2 in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume149
Issue number1-2
DOIs
Publication statusPublished - Jan 3 1999

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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