2 MeV Cu+ ions were implanted in silica glass at doses from 1×1015 to 1×1017 ions/cm2. Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1×1016 Cu+ ions/cm2 in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Jan 3 1999|
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics