TY - JOUR
T1 - Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation
AU - Fukumi, Kohei
AU - Chayahara, Akiyoshi
AU - Ohora, Kenji
AU - Kitamura, Naoyuki
AU - Horino, Yuji
AU - Fujii, Kanenaga
AU - Makihara, Masaki
AU - Hayakaya, Junji
AU - Ohno, Nobuhito
PY - 1999/1/3
Y1 - 1999/1/3
N2 - 2 MeV Cu+ ions were implanted in silica glass at doses from 1×1015 to 1×1017 ions/cm2. Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1×1016 Cu+ ions/cm2 in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass.
AB - 2 MeV Cu+ ions were implanted in silica glass at doses from 1×1015 to 1×1017 ions/cm2. Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1×1016 Cu+ ions/cm2 in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass.
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U2 - 10.1016/S0168-583X(98)00729-0
DO - 10.1016/S0168-583X(98)00729-0
M3 - Article
AN - SCOPUS:0033518353
SN - 0168-583X
VL - 149
SP - 77
EP - 80
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-2
ER -