Photoluminescence of layer semiconductor p-GaSe doped with Mg

S. Shigetomi, T. Ikari, Hiroshi Nakashima

    Research output: Contribution to journal › Article

    9 Citations (Scopus)
    Original languageEnglish
    JournalPhysica Status Solidi (A) Applied Research
    Volume156
    Issue number2
    DOIs
    Publication statusPublished - Jan 1 1996

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    Semiconductor doping
    Light emission
    Stacking faults
    crystal defects
    Thermal effects
    light emission
    Magnesium
    temperature effects
    Spectrometers
    magnesium
    Quenching
    Photoluminescence
    Energy gap
    Activation energy
    quenching
    Single crystals
    Spectroscopy
    spectrometers
    Semiconductor materials
    activation energy

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Photoluminescence of layer semiconductor p-GaSe doped with Mg. / Shigetomi, S.; Ikari, T.; Nakashima, Hiroshi.

    In: Physica Status Solidi (A) Applied Research, Vol. 156, No. 2, 01.01.1996.

    Research output: Contribution to journal › Article

    Shigetomi, S, Ikari, T & Nakashima, H 1996, 'Photoluminescence of layer semiconductor p-GaSe doped with Mg', Physica Status Solidi (A) Applied Research, vol. 156, no. 2. https://doi.org/10.1002/pssa.2211560233
    Shigetomi S, Ikari T, Nakashima H. Photoluminescence of layer semiconductor p-GaSe doped with Mg. Physica Status Solidi (A) Applied Research. 1996 Jan 1;156(2). https://doi.org/10.1002/pssa.2211560233
    Shigetomi, S. ; Ikari, T. ; Nakashima, Hiroshi. / Photoluminescence of layer semiconductor p-GaSe doped with Mg. In: Physica Status Solidi (A) Applied Research. 1996 ; Vol. 156, No. 2.
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