Photoluminescence of layer semiconductor p-GaSe doped with Mg

S. Shigetomi, T. Ikari, H. Nakashima

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	k21-k24
Journal	Physica Status Solidi (A) Applied Research
Volume	156
Issue number	2
DOIs	https://doi.org/10.1002/pssa.2211560233
Publication status	Published - 1996

Cite this

@article{da1813be810c40eaa48988f9e747bd20,

title = "Photoluminescence of layer semiconductor p-GaSe doped with Mg",

author = "S. Shigetomi and T. Ikari and H. Nakashima",

year = "1996",

doi = "10.1002/pssa.2211560233",

language = "English",

volume = "156",

pages = "k21--k24",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Photoluminescence of layer semiconductor p-GaSe doped with Mg

AU - Shigetomi, S.

AU - Ikari, T.

AU - Nakashima, H.

PY - 1996

Y1 - 1996

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U2 - 10.1002/pssa.2211560233

DO - 10.1002/pssa.2211560233

M3 - Article

AN - SCOPUS:0030218276

VL - 156

SP - k21-k24

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 2

ER -