Photoluminescence properties of β-FeSi2 on Cu- or Au-coated Si

Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

Research output: Contribution to journalArticle

Abstract

The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Original languageEnglish
Pages (from-to)377-379
Number of pages3
JournalWorld Academy of Science, Engineering and Technology
Volume50
Publication statusPublished - Feb 2011

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Photoluminescence
Crystals
Optoelectronic devices
Light absorption
Silicon
Coatings

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Photoluminescence properties of β-FeSi2 on Cu- or Au-coated Si. / Akiyama, Kensuke; Kaneko, Satoru; Ozawa, Takeshi; Yokomizo, Kazuya; Itakura, Masaru.

In: World Academy of Science, Engineering and Technology, Vol. 50, 02.2011, p. 377-379.

Research output: Contribution to journalArticle

Akiyama, Kensuke ; Kaneko, Satoru ; Ozawa, Takeshi ; Yokomizo, Kazuya ; Itakura, Masaru. / Photoluminescence properties of β-FeSi2 on Cu- or Au-coated Si. In: World Academy of Science, Engineering and Technology. 2011 ; Vol. 50. pp. 377-379.
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