Photoluminescence quenching by optical bias in AlGaAs/GaAs single quantum wells

Tomohiro Sakai, Takayuki Watanabe, Yasuo Cho, Kaori Matsuura, Hiroshi Funakubo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Anomalous photoluminescence characteristics are reported for AlGaAs/GaAs single quantum wells with one-monolayer-thick InAs inserted at the center of the GaAs well under an external electric field. The photoluminescence produced by exciting only the quantum well is strongly quenched when simultaneous excitation is performed using a high-energy light which can excite both the quantum well and the AlGaAs barrier layers. Since no prominent increase in the photocurrent accompanies the photoluminescence quenching, an efficient recombination center becomes operative under the simultaneous high-energy excitation. A carrier trapping center in AlGaAs which becomes active as a nonradiative recombination center after trapping carriers is considered to explain the observed result.

Original languageEnglish
Pages (from-to)6477-6480
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number11
Publication statusPublished - Nov 1 2001
Externally publishedYes

Fingerprint

Semiconductor quantum wells
aluminum gallium arsenides
Quenching
Photoluminescence
quenching
quantum wells
photoluminescence
Excitation energy
trapping
Photocurrents
Monolayers
barrier layers
Electric fields
excitation
photocurrents
electric fields
energy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Photoluminescence quenching by optical bias in AlGaAs/GaAs single quantum wells. / Sakai, Tomohiro; Watanabe, Takayuki; Cho, Yasuo; Matsuura, Kaori; Funakubo, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 11, 01.11.2001, p. 6477-6480.

Research output: Contribution to journalArticle

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