Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn

Sh Shigetomi, T. Ikari, Hiroshi Nakashima

Research output: Contribution to journalArticle

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Abstract

Radiative recombination mechanisms in n-GaSe doped with Sn have been investigated through photoluminescence (PL) measurements. For samples doped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL intensity, peak energy and full width at half-maximum are characterized using the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.

Original languageEnglish
Pages (from-to)4291-4292
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume35
Issue number8
Publication statusPublished - Aug 1996
Externally publishedYes

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Photoluminescence
photoluminescence
radiative recombination
Full width at half maximum
Vacancies
temperature dependence
configurations
Layered semiconductors
Temperature
energy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn. / Shigetomi, Sh; Ikari, T.; Nakashima, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 35, No. 8, 08.1996, p. 4291-4292.

Research output: Contribution to journalArticle

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