Radiative recombination mechanisms in n-GaSe doped with Sn have been investigated through photoluminescence (PL) measurements. For samples doped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL intensity, peak energy and full width at half-maximum are characterized using the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes|
|Publication status||Published - Aug 1996|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)