Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn

Sh Shigetomi; T. Ikari; Hiroshi Nakashima

Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn

Sh Shigetomi, T. Ikari, Hiroshi Nakashima

Research output: Contribution to journal › Article › peer-review

Abstract

Radiative recombination mechanisms in n-GaSe doped with Sn have been investigated through photoluminescence (PL) measurements. For samples doped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL intensity, peak energy and full width at half-maximum are characterized using the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.

Original language	English
Pages (from-to)	4291-4292
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume	35
Issue number	8
Publication status	Published - Aug 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

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title = "Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn",

abstract = "Radiative recombination mechanisms in n-GaSe doped with Sn have been investigated through photoluminescence (PL) measurements. For samples doped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL intensity, peak energy and full width at half-maximum are characterized using the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.",

author = "Sh Shigetomi and T. Ikari and Hiroshi Nakashima",

year = "1996",

month = aug,

language = "English",

volume = "35",

pages = "4291--4292",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "8",

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T1 - Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn

AU - Shigetomi, Sh

AU - Ikari, T.

AU - Nakashima, Hiroshi

PY - 1996/8

Y1 - 1996/8

N2 - Radiative recombination mechanisms in n-GaSe doped with Sn have been investigated through photoluminescence (PL) measurements. For samples doped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL intensity, peak energy and full width at half-maximum are characterized using the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.

AB - Radiative recombination mechanisms in n-GaSe doped with Sn have been investigated through photoluminescence (PL) measurements. For samples doped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL intensity, peak energy and full width at half-maximum are characterized using the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.

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M3 - Article

AN - SCOPUS:0030206087

SN - 0021-4922

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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IS - 8

ER -

Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn

Abstract

All Science Journal Classification (ASJC) codes

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