Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn

Sh Shigetomi, T. Ikari, Hiroshi Nakashima

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Radiative recombination mechanisms in n-GaSe doped with Sn have been investigated through photoluminescence (PL) measurements. For samples doped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL intensity, peak energy and full width at half-maximum are characterized using the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.

Original languageEnglish
Pages (from-to)4291-4292
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume35
Issue number8
Publication statusPublished - Aug 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn'. Together they form a unique fingerprint.

Cite this