Photoresponse of tunneling conduction through Pb(Ti,Zr)O 3/SrTiO 3 Junction at low temperature

Yukio Watanabe, Motochika Okano

Research output: Contribution to journalArticle

Abstract

Epitaxial ferroelectric heterostructures of Pb(Ti,Zr)O 3/Nb-doped SiTiO 3 are found to exhibit a substantial photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type) in ultraviolet (UV) light. Preliminary nonoptimized devices show high performances at all temperatures (T) including cryogenic T. The reverse bias current in the dark increases anomalously with decreasing temperature, whereas the reverese bias current in UV light is the supperposition of a photovoltaic current and this anomalous component. The observations indicate that this component is due to Zener tunneling through the Pb(Ti,Zr)O 3/SrTiO 3 pn junction.

Original languageEnglish
Pages (from-to)49-54
Number of pages6
JournalIntegrated Ferroelectrics
Volume62
DOIs
Publication statusPublished - Dec 1 2004

Fingerprint

Bias currents
Photovoltaic effects
conduction
ultraviolet radiation
Cryogenics
Ferroelectric materials
Heterojunctions
photovoltaic effect
Temperature
cryogenics
Electrons
temperature
Ultraviolet Rays
electrons

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Photoresponse of tunneling conduction through Pb(Ti,Zr)O 3/SrTiO 3 Junction at low temperature. / Watanabe, Yukio; Okano, Motochika.

In: Integrated Ferroelectrics, Vol. 62, 01.12.2004, p. 49-54.

Research output: Contribution to journalArticle

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