Epitaxial ferroelectric heterostructures of Pb(Ti,Zr)O 3/Nb-doped SiTiO 3 are found to exhibit a substantial photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type) in ultraviolet (UV) light. Preliminary nonoptimized devices show high performances at all temperatures (T) including cryogenic T. The reverse bias current in the dark increases anomalously with decreasing temperature, whereas the reverese bias current in UV light is the supperposition of a photovoltaic current and this anomalous component. The observations indicate that this component is due to Zener tunneling through the Pb(Ti,Zr)O 3/SrTiO 3 pn junction.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry