Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

Rawiwan Chaleawpong, Nathaporn Promros, Peerasil Charoenyuenyao, Nattakorn Borwornpornmetee, Pattarapol Sittisart, Phongsaphak Sittimart, Yūki Tanaka, Tsuyoshi Yoshitake

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