Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi₂ Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering

Weerasaruth Kaenrai, Nathaporn Promros, Phongsaphak Sittimart, Rawiwan Chaleawpong, Peerasil Charoenyuenyao, Thanachai Changcharoen, Adison Nopparuchikun, Tomohiro Nogami, Tsuyoshi Yoshitake

Research output: Contribution to journalArticle

Abstract

p-Type Si/intrinsic Si/n-type nanocrystalline iron disilicide heterojunctions were created by utilizing facing targets direct-current sputtering at the pressure of 1.33×10-1 Pa that investigated the photovoltaic properties. They exhibited a large leakage current and a small energy conversion efficiency of 0.62%. From using the method of Nicollian and Brews, the series resistance (Rs) values at zero bias voltage were 7.40 Ω at 2 MHz and 7.57 Ω at 50 kHz, respectively, which were in agreement with that estimated by the means of Norde. From applying the method of Hill-Coleman, the interface state density (nss) values were 3.15×1015 cm-2 eV-1 at 50 kHz and 8.93×1013 cm-2 eV-1 at 2 MHz. The obtained results revealed the presence of Rs and nss at the junction interface, which should be the potential cause of spoiled photovoltaic performance in the heterojunctions.

Original languageEnglish
Pages (from-to)1445-1450
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume19
Issue number3
DOIs
Publication statusPublished - Mar 1 2019

All Science Journal Classification (ASJC) codes

  • Medicine(all)

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