Photovoltaic properties of n-type β-FeSi2/p-type Si heterojunctions

Mahmoud Shaban, Kazuhiro Nakashima, Wataru Yoroyama, Tsuyoshi Yoshitare

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

n-Type β-FeSi2/p-type Si heterojunction solar cells were fabricated. The energy band diagram was derived from the measured ionization potential of β-FeSi2 and well-known parameters. The value of the built-in potential was estimated to be 1.02 V. Under air mass 1.5 illumination, the cell showed a conversion efficiency of 0.63%. The short-circuit current density was 12.81 mA/cm2, whereas the open-circuit voltage was only 176mV, which might be attributed to the iron atoms that diffused into the Si depletion region. The iron atoms that diffused cause current leakage and also act as trap centers for the photogenerated carriers.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number25-28
DOIs
Publication statusPublished - Jul 13 2007

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heterojunctions
iron
air masses
short circuit currents
open circuit voltage
ionization potentials
energy bands
atoms
depletion
leakage
solar cells
illumination
diagrams
traps
current density
causes
cells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Photovoltaic properties of n-type β-FeSi2/p-type Si heterojunctions. / Shaban, Mahmoud; Nakashima, Kazuhiro; Yoroyama, Wataru; Yoshitare, Tsuyoshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 25-28, 13.07.2007.

Research output: Contribution to journalArticle

Shaban, Mahmoud ; Nakashima, Kazuhiro ; Yoroyama, Wataru ; Yoshitare, Tsuyoshi. / Photovoltaic properties of n-type β-FeSi2/p-type Si heterojunctions. In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 25-28.
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