n-Type β-FeSi2/p-type Si heterojunction solar cells were fabricated. The energy band diagram was derived from the measured ionization potential of β-FeSi2 and well-known parameters. The value of the built-in potential was estimated to be 1.02 V. Under air mass 1.5 illumination, the cell showed a conversion efficiency of 0.63%. The short-circuit current density was 12.81 mA/cm2, whereas the open-circuit voltage was only 176mV, which might be attributed to the iron atoms that diffused into the Si depletion region. The iron atoms that diffused cause current leakage and also act as trap centers for the photogenerated carriers.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - Jul 13 2007|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)