Photovoltaic properties of n-type β-FeSi2/p-type Si heterojunctions

Mahmoud Shaban, Kazuhiro Nakashima, Wataru Yoroyama, Tsuyoshi Yoshitare

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    43 Citations (Scopus)

    Abstract

    n-Type β-FeSi2/p-type Si heterojunction solar cells were fabricated. The energy band diagram was derived from the measured ionization potential of β-FeSi2 and well-known parameters. The value of the built-in potential was estimated to be 1.02 V. Under air mass 1.5 illumination, the cell showed a conversion efficiency of 0.63%. The short-circuit current density was 12.81 mA/cm2, whereas the open-circuit voltage was only 176mV, which might be attributed to the iron atoms that diffused into the Si depletion region. The iron atoms that diffused cause current leakage and also act as trap centers for the photogenerated carriers.

    Original languageEnglish
    Pages (from-to)L667-L669
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume46
    Issue number25-28
    DOIs
    Publication statusPublished - Jul 13 2007

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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