Photovoltaic properties of n-type nanocrystalline - FeSi 2/intrinsic-Si/p-type Si heterojunctions fabricated by facing-targets DC sputtering

Keita Nomoto; Mahmoud Shaban; Haruhiko Kondo; Tsuyoshi Yoshitake

doi:10.1109/COMMAD.2008.4802142

Photovoltaic properties of n-type nanocrystalline - FeSi ₂/intrinsic-Si/p-type Si heterojunctions fabricated by facing-targets DC sputtering

Keita Nomoto, Mahmoud Shaban, Haruhiko Kondo, Tsuyoshi Yoshitake

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Nanocrystalline FeSi₂ (NC-FeSi₂) thin films were grown on Si(111) substrates by facing-targets DC sputtering at room temperature using FeSi₂ targets. The NC-FeSi₂ films showed hopping conduction behavior, which was confirmed by the temperature dependence of the electric conductivity. n-Type NC-FeSi₂/p-type Si and n-type NC-FeSi₂/i-Si/p-type Si heterojunctions were prepared to be employed as photovoltaics. For the p-i-n heterojunctions, i-Si thin layer reduced the leakage current and improved photovoltaic properties as compared to the p-n heterojunctions. This improvement might be due to the i-Si layer that acts as a leakage blocking layer rather than a light absorption layer.

Original language	English
Title of host publication	Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Pages	263-266
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2008.4802142
Publication status	Published - 2008
Event	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia Duration: Jul 28 2008 → Aug 1 2008

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Country/Territory	Australia
City	Sydney, NSW
Period	7/28/08 → 8/1/08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/COMMAD.2008.4802142

Cite this

Nomoto, K., Shaban, M., Kondo, H., & Yoshitake, T. (2008). Photovoltaic properties of n-type nanocrystalline - FeSi ₂/intrinsic-Si/p-type Si heterojunctions fabricated by facing-targets DC sputtering. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 (pp. 263-266). [4802142] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802142

Photovoltaic properties of n-type nanocrystalline - FeSi ₂/intrinsic-Si/p-type Si heterojunctions fabricated by facing-targets DC sputtering. / Nomoto, Keita; Shaban, Mahmoud; Kondo, Haruhiko et al.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 263-266 4802142 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nomoto, K, Shaban, M, Kondo, H & Yoshitake, T 2008, Photovoltaic properties of n-type nanocrystalline - FeSi ₂/intrinsic-Si/p-type Si heterojunctions fabricated by facing-targets DC sputtering. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08., 4802142, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 263-266, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 7/28/08. https://doi.org/10.1109/COMMAD.2008.4802142

Nomoto K, Shaban M, Kondo H, Yoshitake T. Photovoltaic properties of n-type nanocrystalline - FeSi ₂/intrinsic-Si/p-type Si heterojunctions fabricated by facing-targets DC sputtering. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 263-266. 4802142. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2008.4802142

Nomoto, Keita ; Shaban, Mahmoud ; Kondo, Haruhiko et al. / Photovoltaic properties of n-type nanocrystalline - FeSi ₂/intrinsic-Si/p-type Si heterojunctions fabricated by facing-targets DC sputtering. Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. pp. 263-266 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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abstract = "Nanocrystalline FeSi2 (NC-FeSi2) thin films were grown on Si(111) substrates by facing-targets DC sputtering at room temperature using FeSi2 targets. The NC-FeSi2 films showed hopping conduction behavior, which was confirmed by the temperature dependence of the electric conductivity. n-Type NC-FeSi2/p-type Si and n-type NC-FeSi2/i-Si/p-type Si heterojunctions were prepared to be employed as photovoltaics. For the p-i-n heterojunctions, i-Si thin layer reduced the leakage current and improved photovoltaic properties as compared to the p-n heterojunctions. This improvement might be due to the i-Si layer that acts as a leakage blocking layer rather than a light absorption layer.",

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AB - Nanocrystalline FeSi2 (NC-FeSi2) thin films were grown on Si(111) substrates by facing-targets DC sputtering at room temperature using FeSi2 targets. The NC-FeSi2 films showed hopping conduction behavior, which was confirmed by the temperature dependence of the electric conductivity. n-Type NC-FeSi2/p-type Si and n-type NC-FeSi2/i-Si/p-type Si heterojunctions were prepared to be employed as photovoltaics. For the p-i-n heterojunctions, i-Si thin layer reduced the leakage current and improved photovoltaic properties as compared to the p-n heterojunctions. This improvement might be due to the i-Si layer that acts as a leakage blocking layer rather than a light absorption layer.

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