Photovoltaic properties of n-type nanocrystalline - FeSi 2/intrinsic-Si/p-type Si heterojunctions fabricated by facing-targets DC sputtering

Keita Nomoto, Mahmoud Shaban, Haruhiko Kondo, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Nanocrystalline FeSi2 (NC-FeSi2) thin films were grown on Si(111) substrates by facing-targets DC sputtering at room temperature using FeSi2 targets. The NC-FeSi2 films showed hopping conduction behavior, which was confirmed by the temperature dependence of the electric conductivity. n-Type NC-FeSi2/p-type Si and n-type NC-FeSi2/i-Si/p-type Si heterojunctions were prepared to be employed as photovoltaics. For the p-i-n heterojunctions, i-Si thin layer reduced the leakage current and improved photovoltaic properties as compared to the p-n heterojunctions. This improvement might be due to the i-Si layer that acts as a leakage blocking layer rather than a light absorption layer.

    Original languageEnglish
    Title of host publicationProceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
    Pages263-266
    Number of pages4
    DOIs
    Publication statusPublished - Dec 1 2008
    Event2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia
    Duration: Jul 28 2008Aug 1 2008

    Publication series

    NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

    Other

    Other2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
    CountryAustralia
    CitySydney, NSW
    Period7/28/088/1/08

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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