TY - GEN
T1 - Piezoelectric enhancement of relaxor-based lead-free piezoelectric ceramics by nanodomain engineering
AU - Fujii, Ichiro
AU - Mitsui, Ryuta
AU - Nakashima, Kouichi
AU - Kumada, Nobuhiro
AU - Wada, Satoshi
AU - Yabuta, Hisato
AU - Shimada, Mikio
AU - Watanabe, Takayuki
AU - Miura, Kaoru
PY - 2012/10/31
Y1 - 2012/10/31
N2 - 0.3BaTiO 3-0.1Bi(Mg 1/2Ti 1/2)O 3-0.6BiFeO 3 ceramics were either doped with vanadium or sintered in calcined powder with the same composition. Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 x 10 -7 A/cm 2) and absence of dielectric relaxation behaviors observed in frequency-and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460°C. The maximum field-induced strain over the applied field, S max/E max, of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. The increase was related to a reduced concentration of bismuth vacancy - oxygen vacancy defect dipoles.
AB - 0.3BaTiO 3-0.1Bi(Mg 1/2Ti 1/2)O 3-0.6BiFeO 3 ceramics were either doped with vanadium or sintered in calcined powder with the same composition. Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 x 10 -7 A/cm 2) and absence of dielectric relaxation behaviors observed in frequency-and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460°C. The maximum field-induced strain over the applied field, S max/E max, of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. The increase was related to a reduced concentration of bismuth vacancy - oxygen vacancy defect dipoles.
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U2 - 10.1109/ISAF.2012.6297767
DO - 10.1109/ISAF.2012.6297767
M3 - Conference contribution
AN - SCOPUS:84867908684
SN - 9781467326681
T3 - Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012
BT - Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012
T2 - 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM
Y2 - 9 July 2012 through 13 July 2012
ER -