Plasma CVD for producing Si quantum dot films

Shinya Iwashita, Hiroomi Miyahara, Kazunori Koga, Masaharu Shiratani, Shota Nunomura, Michio Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H2+SiH4 VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1×1016 cm-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
Pages558-560
Number of pages3
DOIs
Publication statusPublished - Dec 1 2006
Event22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV - Matsue, Japan
Duration: Sep 25 2006Sep 29 2006

Publication series

NameProceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
Volume2
ISSN (Print)1093-2941

Other

Other22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
CountryJapan
CityMatsue
Period9/25/069/29/06

All Science Journal Classification (ASJC) codes

  • Software
  • Computer Networks and Communications

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