Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source

Hong Jie Jin, Masaharu Shiratani, Takashi Kawasaki, Tsuyoshi Fukuzawa, Toshio Kinoshita, Yukio Watanabe, Hiroharu Kawasaki, Masaharu Toyofuku

Research output: Contribution to journalArticle

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Abstract

In situ Fourier-transform infrared measurements have been carried out to study the effects of H atoms on removing impurities in Cu thin films during plasma enhanced metal organic chemical vapor deposition (PEMOCVD) using bis(hexafluoroacetylacetonato) copper (II), Cu(hfac)2 as a source material. The results show that H atoms are very effective in removing impurities in the film, as well as on its surface. Based on such knowledge regarding the effects of H atoms, a PEMOCVD reactor equipped with an H atom source is developed to control both densities of H atoms and Cu-contained radicals independently. High purity (≈ 100%) Cu films of a low resistivity of 2 μΩ cm can be deposited for a H2 gas volume fraction of 50%-67% by using the H atom source, while the high purity films were obtained only for a very high H2 gas volume fraction above about 90% in the case of no H atom source as reported previously. This feature opens up a possibility of deposition of high quality Cu films at a high rate using the reactor equipped with the H atom source, since a gas volume fraction of Cu metal organic material can be increased by more than five times.

Original languageEnglish
Pages (from-to)726-730
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number3
DOIs
Publication statusPublished - Jan 1 1999

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Organic Chemicals
Organic chemicals
metalorganic chemical vapor deposition
Copper
Chemical vapor deposition
purity
Metals
reactors
Plasmas
Thin films
copper
Atoms
thin films
atoms
Volume fraction
Gases
gases
Impurities
impurities
organic materials

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source. / Jin, Hong Jie; Shiratani, Masaharu; Kawasaki, Takashi; Fukuzawa, Tsuyoshi; Kinoshita, Toshio; Watanabe, Yukio; Kawasaki, Hiroharu; Toyofuku, Masaharu.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 3, 01.01.1999, p. 726-730.

Research output: Contribution to journalArticle

Jin, Hong Jie ; Shiratani, Masaharu ; Kawasaki, Takashi ; Fukuzawa, Tsuyoshi ; Kinoshita, Toshio ; Watanabe, Yukio ; Kawasaki, Hiroharu ; Toyofuku, Masaharu. / Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999 ; Vol. 17, No. 3. pp. 726-730.
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