Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma

Naho Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda, Y. Kawai

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Pulse modulation of the incident microwave power was investigated for the control of plasma parameters and improvement of the films deposited in ECR plasma. Measurements of the temporal variation of plasma parameters in the pulse-modulated ECR plasma indicate that the electron density varies little in time while the electron temperature decreases rapidly within 10 μs after the discharge. The results suggest that pulse modulation where the power-off period is approximately 10 μs enables reduction of the mean electron temperature while keeping a high electron density. Furthermore, we have prepared hydrogenated amorphous silicon films by the ECR plasma CVD method. It was found that the ratio of photoconductivity to dark conductivity of the film was improved from 103 to 2.5 x 105 without heating the substrate and the deposition rate was 14 Å/s by pulse-modulated ECR plasma. (C) 2000 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)54-57
Number of pages4
JournalSurface and Coatings Technology
Volume131
Issue number1-3
DOIs
Publication statusPublished - Dec 1 2000

Fingerprint

Plasmas
Thin films
Pulse modulation
thin films
pulse modulation
Electron temperature
Carrier concentration
Plasma CVD
electron energy
Photoconductivity
Deposition rates
Amorphous silicon
silicon films
pulses
photoconductivity
amorphous silicon
Microwaves
Heating
vapor deposition
microwaves

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma. / Itagaki, Naho; Fukuda, A.; Yoshizawa, T.; Shindo, M.; Ueda, Y.; Kawai, Y.

In: Surface and Coatings Technology, Vol. 131, No. 1-3, 01.12.2000, p. 54-57.

Research output: Contribution to journalArticle

Itagaki, Naho ; Fukuda, A. ; Yoshizawa, T. ; Shindo, M. ; Ueda, Y. ; Kawai, Y. / Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma. In: Surface and Coatings Technology. 2000 ; Vol. 131, No. 1-3. pp. 54-57.
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