Plasma processing of functional thin films by sputtering deposition using metal-based powder target

Titanium-based functional thin films were prepared by a sputtering deposition method using a metal powder target, and the electron density and temperature of the processing plasma were investigated. The electron density of the plasma, measured by a probe method, when using a powder target was higher than that when using a bulk target. The deposition rate when using a powder target was also higher than that in the case of a bulk target. These results may be due to the net-cathode area of the powder target being larger than that of the bulk target. X-ray photoelectron spectroscopy, X-ray diffraction measurements, and atomic force microscopy images of the films prepared using the Ti powder target indicated nearly the same properties as those of films prepared using a Ti bulk target, and the prepared films are oxide. These results suggest that TiO₂ thin films can be prepared using a Ti powder target and that the quality is almost the same as those of films prepared using a Ti bulk target.