pn junction formation by Si paste coated on metal substrates

Yan Li, Hiroshi Inokuchi, Takahiro Orita, Kunihiko Maejima, Kensuke Nakashima, Satoshi Ooue, Hiroshige Matsumoto, Yoshimine Kato

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.

Original languageEnglish
Pages (from-to)6693-6700
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume30
Issue number7
DOIs
Publication statusPublished - Apr 15 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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