Point-Arc Remote Plasma Chemical Vapor Deposition for High-Quality Single-Crystal Diamond Selective Growth

Wenxi Fei, Masafumi Inaba, Haruka Hoshino, Ikuto Tsuyusaki, Sora Kawai, Masayuki Iwataki, Hiroshi Kawarada

Research output: Contribution to journalArticle

Abstract

Selective growth techniques are believed to be the most effective approaches in the fabrication of diamond devices. Herein, the contamination from antenna and mask damage that causes poor performance in electronic applications is overcome with a high-quality diamond film on Ib (100) substrate, obtained by utilizing point-arc remote microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscope (SEM) images and energy dispersive X-ray (EDX) mapping suggest that the diamond nucleation and selective growth occurred only in unmasked regions. Crystalline quality is evaluated by Raman spectra. Mo concentration from the antenna is detected with secondary ion mass spectroscopy (SIMS) at only a background level in the selectively grown diamond, indicating that the films are free of contaminant from the antenna, at three orders of magnitude lower than the impurity concentration in films selectively grown by typical hot filament CVD. Moreover, the moderate growth rate (approximately 50 nm h−1) enables high reproducibility, which is of great importance for the precise control thickness of the selective growth layer, and thus the proposed method offers significant potential for the architecture modification of diamond devices.

Original languageEnglish
Article number1900227
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume216
Issue number21
DOIs
Publication statusPublished - Nov 1 2019

Fingerprint

Diamond
Chemical vapor deposition
Diamonds
arcs
diamonds
Single crystals
vapor deposition
Plasmas
antennas
single crystals
Antennas
Impurities
Thickness control
Diamond films
diamond films
contaminants
Raman scattering
Masks
filaments
contamination

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Point-Arc Remote Plasma Chemical Vapor Deposition for High-Quality Single-Crystal Diamond Selective Growth. / Fei, Wenxi; Inaba, Masafumi; Hoshino, Haruka; Tsuyusaki, Ikuto; Kawai, Sora; Iwataki, Masayuki; Kawarada, Hiroshi.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 216, No. 21, 1900227, 01.11.2019.

Research output: Contribution to journalArticle

Fei, Wenxi ; Inaba, Masafumi ; Hoshino, Haruka ; Tsuyusaki, Ikuto ; Kawai, Sora ; Iwataki, Masayuki ; Kawarada, Hiroshi. / Point-Arc Remote Plasma Chemical Vapor Deposition for High-Quality Single-Crystal Diamond Selective Growth. In: Physica Status Solidi (A) Applications and Materials Science. 2019 ; Vol. 216, No. 21.
@article{5150ced9660d4f01b07e6abb49dfa966,
title = "Point-Arc Remote Plasma Chemical Vapor Deposition for High-Quality Single-Crystal Diamond Selective Growth",
abstract = "Selective growth techniques are believed to be the most effective approaches in the fabrication of diamond devices. Herein, the contamination from antenna and mask damage that causes poor performance in electronic applications is overcome with a high-quality diamond film on Ib (100) substrate, obtained by utilizing point-arc remote microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscope (SEM) images and energy dispersive X-ray (EDX) mapping suggest that the diamond nucleation and selective growth occurred only in unmasked regions. Crystalline quality is evaluated by Raman spectra. Mo concentration from the antenna is detected with secondary ion mass spectroscopy (SIMS) at only a background level in the selectively grown diamond, indicating that the films are free of contaminant from the antenna, at three orders of magnitude lower than the impurity concentration in films selectively grown by typical hot filament CVD. Moreover, the moderate growth rate (approximately 50 nm h−1) enables high reproducibility, which is of great importance for the precise control thickness of the selective growth layer, and thus the proposed method offers significant potential for the architecture modification of diamond devices.",
author = "Wenxi Fei and Masafumi Inaba and Haruka Hoshino and Ikuto Tsuyusaki and Sora Kawai and Masayuki Iwataki and Hiroshi Kawarada",
year = "2019",
month = "11",
day = "1",
doi = "10.1002/pssa.201900227",
language = "English",
volume = "216",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "21",

}

TY - JOUR

T1 - Point-Arc Remote Plasma Chemical Vapor Deposition for High-Quality Single-Crystal Diamond Selective Growth

AU - Fei, Wenxi

AU - Inaba, Masafumi

AU - Hoshino, Haruka

AU - Tsuyusaki, Ikuto

AU - Kawai, Sora

AU - Iwataki, Masayuki

AU - Kawarada, Hiroshi

PY - 2019/11/1

Y1 - 2019/11/1

N2 - Selective growth techniques are believed to be the most effective approaches in the fabrication of diamond devices. Herein, the contamination from antenna and mask damage that causes poor performance in electronic applications is overcome with a high-quality diamond film on Ib (100) substrate, obtained by utilizing point-arc remote microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscope (SEM) images and energy dispersive X-ray (EDX) mapping suggest that the diamond nucleation and selective growth occurred only in unmasked regions. Crystalline quality is evaluated by Raman spectra. Mo concentration from the antenna is detected with secondary ion mass spectroscopy (SIMS) at only a background level in the selectively grown diamond, indicating that the films are free of contaminant from the antenna, at three orders of magnitude lower than the impurity concentration in films selectively grown by typical hot filament CVD. Moreover, the moderate growth rate (approximately 50 nm h−1) enables high reproducibility, which is of great importance for the precise control thickness of the selective growth layer, and thus the proposed method offers significant potential for the architecture modification of diamond devices.

AB - Selective growth techniques are believed to be the most effective approaches in the fabrication of diamond devices. Herein, the contamination from antenna and mask damage that causes poor performance in electronic applications is overcome with a high-quality diamond film on Ib (100) substrate, obtained by utilizing point-arc remote microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscope (SEM) images and energy dispersive X-ray (EDX) mapping suggest that the diamond nucleation and selective growth occurred only in unmasked regions. Crystalline quality is evaluated by Raman spectra. Mo concentration from the antenna is detected with secondary ion mass spectroscopy (SIMS) at only a background level in the selectively grown diamond, indicating that the films are free of contaminant from the antenna, at three orders of magnitude lower than the impurity concentration in films selectively grown by typical hot filament CVD. Moreover, the moderate growth rate (approximately 50 nm h−1) enables high reproducibility, which is of great importance for the precise control thickness of the selective growth layer, and thus the proposed method offers significant potential for the architecture modification of diamond devices.

UR - http://www.scopus.com/inward/record.url?scp=85069839234&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069839234&partnerID=8YFLogxK

U2 - 10.1002/pssa.201900227

DO - 10.1002/pssa.201900227

M3 - Article

AN - SCOPUS:85069839234

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 21

M1 - 1900227

ER -