Point defect clusters and dislocations in FIB irradiated nanocrystalline aluminum films: An electron tomography and aberration-corrected high-resolution ADF-STEM study

Hosni Idrissi, Stuart Turner, Masatoshi Mitsuhara, Binjie Wang, Satoshi Hata, Michael Coulombier, Jean Pierre Raskin, Thomas Pardoen, Gustaaf Van Tendeloo, Dominique Schryvers

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Focused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.

Original languageEnglish
Pages (from-to)983-990
Number of pages8
JournalMicroscopy and Microanalysis
Volume17
Issue number6
DOIs
Publication statusPublished - Dec 1 2011

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Focused ion beams
Point defects
Aberrations
Dislocations (crystals)
point defects
Tomography
aberration
tomography
ion beams
Transmission electron microscopy
aluminum
Aluminum
Electrons
high resolution
Nanostructured materials
Structural properties
Residual stresses
transmission electron microscopy
electrons
Irradiation

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

Point defect clusters and dislocations in FIB irradiated nanocrystalline aluminum films : An electron tomography and aberration-corrected high-resolution ADF-STEM study. / Idrissi, Hosni; Turner, Stuart; Mitsuhara, Masatoshi; Wang, Binjie; Hata, Satoshi; Coulombier, Michael; Raskin, Jean Pierre; Pardoen, Thomas; Van Tendeloo, Gustaaf; Schryvers, Dominique.

In: Microscopy and Microanalysis, Vol. 17, No. 6, 01.12.2011, p. 983-990.

Research output: Contribution to journalArticle

Idrissi, Hosni ; Turner, Stuart ; Mitsuhara, Masatoshi ; Wang, Binjie ; Hata, Satoshi ; Coulombier, Michael ; Raskin, Jean Pierre ; Pardoen, Thomas ; Van Tendeloo, Gustaaf ; Schryvers, Dominique. / Point defect clusters and dislocations in FIB irradiated nanocrystalline aluminum films : An electron tomography and aberration-corrected high-resolution ADF-STEM study. In: Microscopy and Microanalysis. 2011 ; Vol. 17, No. 6. pp. 983-990.
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