Polarity effect on growth acceleration of arabidopsis thaliana by DC electric field

Takamasa Okumura, Yuji Muramoto, Noriyuki Shimizu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have been studying the effect of dc electric field on plant growth. It is clearly indicated that the dc field increases the plant growth. In our recent study, the seeds of Arabidopsis thaliana (thale cress) were cultivated under 0.0 kV/m, 2.5 kV/m, 5.0 kV/m, 1.0 kV/m, and 15.0 kV/m. The results are briefly summarized as follows: (i) dc field increases seed germination rate. (ii) It is suggested that the optimum field strength for plant growth exists around 10.0 kV/m. The effect of dc field polarity on plant growth also should be studied. In this report, we examined the polarity effect on growth acceleration of Arabidopsis thaliana by dc electric field.

Original languageEnglish
Title of host publicationICSD 2013 - Proceedings of the 2013 IEEE International Conference on Solid Dielectrics
Pages591-594
Number of pages4
DOIs
Publication statusPublished - Dec 1 2013
Externally publishedYes
EventICSD 2013 - Proceedings of the 2013 IEEE International Conference on Solid Dielectrics - Bologna, Italy
Duration: Jun 30 2013Jul 4 2013

Publication series

NameProceedings of IEEE International Conference on Solid Dielectrics, ICSD
ISSN (Print)1553-5282
ISSN (Electronic)2159-1687

Conference

ConferenceICSD 2013 - Proceedings of the 2013 IEEE International Conference on Solid Dielectrics
CountryItaly
CityBologna
Period6/30/137/4/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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  • Cite this

    Okumura, T., Muramoto, Y., & Shimizu, N. (2013). Polarity effect on growth acceleration of arabidopsis thaliana by DC electric field. In ICSD 2013 - Proceedings of the 2013 IEEE International Conference on Solid Dielectrics (pp. 591-594). [6619702] (Proceedings of IEEE International Conference on Solid Dielectrics, ICSD). https://doi.org/10.1109/ICSD.2013.6619702