Polarization Doping in a GaN-InN System—Ab Initio Simulation

Ashfaq Ahmad, Pawel Strak, Pawel Tomasz Kempisty, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R. Zytkiewicz, Grzegorz Muziol, Eva Monroy, Agata Kaminska, Stanislaw Krukowski

Research output: Contribution to journalArticlepeer-review


Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope. It was shown that the GaN-InN polarization difference is changed by piezoelectric effects. The polarization difference is in agreement with the earlier obtained data despite the relatively narrow bandgap for the simulated system. The hole generation may be applied in the design of blue and green laser and light-emitting diodes.

Original languageEnglish
Article number1227
Issue number3
Publication statusPublished - Feb 2023

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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