Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

Md Sherajul Islam; A. G. Bhuiyan; S. Tanaka; T. Makino; A. Hashimoto

doi:10.1063/1.4904469

Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

Md Sherajul Islam, A. G. Bhuiyan, S. Tanaka, T. Makino, A. Hashimoto

Applied Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO₂/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

Original language	English
Article number	243103
Journal	Applied Physics Letters
Volume	105
Issue number	24
DOIs	https://doi.org/10.1063/1.4904469
Publication status	Published - Dec 15 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4904469

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title = "Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene",

abstract = "This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO2/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.",

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AU - Islam, Md Sherajul

AU - Bhuiyan, A. G.

AU - Tanaka, S.

AU - Makino, T.

AU - Hashimoto, A.

PY - 2014/12/15

Y1 - 2014/12/15

N2 - This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO2/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

AB - This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO2/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

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IS - 24

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Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

Abstract

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