Abstract
This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO2/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.
Original language | English |
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Article number | 243103 |
Journal | Applied Physics Letters |
Volume | 105 |
Issue number | 24 |
DOIs | |
Publication status | Published - Dec 15 2014 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)