Abstract
This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO2/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.
| Original language | English |
|---|---|
| Article number | 243103 |
| Journal | Applied Physics Letters |
| Volume | 105 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - Dec 15 2014 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene. / Islam, Md Sherajul; Bhuiyan, A. G.; Tanaka, S.; Makino, T.; Hashimoto, A.
In: Applied Physics Letters, Vol. 105, No. 24, 243103, 15.12.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene
AU - Islam, Md Sherajul
AU - Bhuiyan, A. G.
AU - Tanaka, S.
AU - Makino, T.
AU - Hashimoto, A.
PY - 2014/12/15
Y1 - 2014/12/15
N2 - This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO2/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.
AB - This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO2/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.
UR - http://www.scopus.com/inward/record.url?scp=84919819896&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84919819896&partnerID=8YFLogxK
U2 - 10.1063/1.4904469
DO - 10.1063/1.4904469
M3 - Article
AN - SCOPUS:84919819896
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 243103
ER -