To realize an efficient and high-quality chemical-mechanical polishing process for the surface of a SiC wafer, a new type of MnO2 slurry is developed employing the multi-valence and oxidation-reduction characteristics of MnO2 particles. This slurry is utilized to polish the Si-face of SiC wafers. In this paper, the influences of the polishing particle concentration and the pH of slurry on MRR are analyzed, the polishing performance of the MnO2 slurry is studied, and the polishing mechanism of the MnO2 slurry on the SiC wafer is determined. The polishing mechanism of the MnO2 slurry is verified by selecting commonly used additives, such as KMnO4, and the influence of the additive amount on the MRR is analyzed. Finally, the surface morphology of the material after polishing is observed with analytical instruments. The experimental results show that the MRR of the MnO2 slurry is highly dependent on the pH value of the slurry. The MnO2 particles tend to convert into MnO4- ions in an alkaline environment, and the strong oxidizing property of MnO4- ions greatly improves the polishing efficiency. As the MnO4- ion concentration increases, the MRR can reach over 600 nm/h, and an ultra-smooth surface with a surface.
|Number of pages||8|
|Journal||International Journal of Precision Engineering and Manufacturing|
|Publication status||Published - Dec 1 2018|
All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering