Poly-Si TFT with Schottky source/drain

Gou Nakagawa, Kenji Makihira, Mika Nishisaka, Tanemasa Asano

Research output: Contribution to journalArticle

Abstract

Polycrystalline Si (poly-Si) TFTs with Schottky contacts at the source and drain have been fabricated. The Schottky contacts were made of Ni-silicide. Poly-Si films were prepared by using solid phase crystallization. TFTs were fabricated using a high temperature process. The Schottky source/drain contacts were formed by employing the self-aligned silicide (salicide) process. TFTs showed a good switching characteristic having the on/off current ratio of about 7 orders of magnitude. Due to the nature of the Schottky contact it is possible to reduce the kink in drain current.

Original languageEnglish
Pages (from-to)443-446
Number of pages4
JournalUnknown Journal
Publication statusPublished - 2001
Externally publishedYes

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Drain current
Polysilicon
drain
Crystallization
Temperature
crystallization

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Nakagawa, G., Makihira, K., Nishisaka, M., & Asano, T. (2001). Poly-Si TFT with Schottky source/drain. Unknown Journal, 443-446.

Poly-Si TFT with Schottky source/drain. / Nakagawa, Gou; Makihira, Kenji; Nishisaka, Mika; Asano, Tanemasa.

In: Unknown Journal, 2001, p. 443-446.

Research output: Contribution to journalArticle

Nakagawa, G, Makihira, K, Nishisaka, M & Asano, T 2001, 'Poly-Si TFT with Schottky source/drain', Unknown Journal, pp. 443-446.
Nakagawa G, Makihira K, Nishisaka M, Asano T. Poly-Si TFT with Schottky source/drain. Unknown Journal. 2001;443-446.
Nakagawa, Gou ; Makihira, Kenji ; Nishisaka, Mika ; Asano, Tanemasa. / Poly-Si TFT with Schottky source/drain. In: Unknown Journal. 2001 ; pp. 443-446.
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