Poly-Si TFT with Schottky source/drain

Gou Nakagawa, Kenji Makihira, Mika Nishisaka, Tanemasa Asano

Research output: Contribution to journalConference article

Abstract

Polycrystalline Si (poly-Si) TFTs with Schottky contacts at the source and drain have been fabricated. The Schottky contacts were made of Ni-silicide. Poly-Si films were prepared by using solid phase crystallization. TFTs were fabricated using a high temperature process. The Schottky source/drain contacts were formed by employing the self-aligned silicide (salicide) process. TFTs showed a good switching characteristic having the on/off current ratio of about 7 orders of magnitude. Due to the nature of the Schottky contact it is possible to reduce the kink in drain current.

Original languageEnglish
Pages (from-to)443-446
Number of pages4
JournalSID Conference Record of the International Display Research Conference
Publication statusPublished - Dec 1 2001
EventAsia Display/IDW 2001 - Nagoya, Japan
Duration: Oct 16 2002Oct 19 2002

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Nakagawa, G., Makihira, K., Nishisaka, M., & Asano, T. (2001). Poly-Si TFT with Schottky source/drain. SID Conference Record of the International Display Research Conference, 443-446.