Polymorphic In-Plane Heterostructures of Monolayer WS2 for Light-Triggered Field-Effect Transistors

Pawan Kumar, Kartikey Thakar, Navneet Chandra Verma, Jayeeta Biswas, Takuya Maeda, Ahin Roy, Kenji Kaneko, Chayan Kanti Nandi, Saurabh Lodha, Viswanath Balakrishnan

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The realization of next-generation transition-metal dichalcogenide based nanoscale devices demands stringent control over coherent in-plane heterostructures of atomically thin monolayers with exceptional properties. In this paper, we report atmospheric-pressure chemical vapor deposition growth of large-domain, coherent polymorphic in-plane heterostructures of monolayer WS2 on a SiO2/Si substrate with intriguing optical and electronic properties. The formation of in-plane heterostructures with 1H and 1T polymorphs was extensively analyzed using a variety of spectroscopic as well as microscopic techniques, along with lifetime luminescence imaging. High-angle annular dark-field scanning transmission electron microscopy revealed coexistence of the heterophases in monolayer WS2 heterostructures. Back-gated photoconductivity measurements in nanoscale field-effect-transistor device geometry and the rational design of a WS2 heterostructure pattern demonstrate optoelectronic applications.

Original languageEnglish
Pages (from-to)3750-3759
Number of pages10
JournalACS Applied Nano Materials
Issue number4
Publication statusPublished - Apr 24 2020

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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    Kumar, P., Thakar, K., Verma, N. C., Biswas, J., Maeda, T., Roy, A., Kaneko, K., Nandi, C. K., Lodha, S., & Balakrishnan, V. (2020). Polymorphic In-Plane Heterostructures of Monolayer WS2 for Light-Triggered Field-Effect Transistors. ACS Applied Nano Materials, 3(4), 3750-3759. https://doi.org/10.1021/acsanm.0c00027