Poly(p-phenylenevinylene)-based field-effect transistors with platinum source-drain electrodes

Hiroshi Kayashima, Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Organic field-effect transistors (FETs) have been fabricated by using poly(p-phenylenevinylene) (PPV) films prepared from a water soluble precursor polymer and p-channel FET conduction was obtained by using platinum source-drain electrodes. When the conversion temperatures for preparing PPV films changed between 180 and 280 °C, the field-effect hole mobilities changed between 4.3 × 10-4 and 8.4 × 10-6 cm2 V -1 s-1. The highest field-effect hole mobility was seen on the PPV thermally converted at 180 °C. The decreases in field-effect mobilities in the PPV films with further extended average π-conjugation length converted at higher temperatures were ascribed to morphological defects owing to crystallization.

Original languageEnglish
Article number010
Pages (from-to)1646-1648
Number of pages3
JournalJournal of Physics D: Applied Physics
Volume40
Issue number6
DOIs
Publication statusPublished - Mar 21 2007

Fingerprint

Field effect transistors
Platinum
platinum
Hole mobility
field effect transistors
hole mobility
Electrodes
electrodes
Organic field effect transistors
Crystallization
conjugation
Polymers
crystallization
conduction
Temperature
Defects
Water
defects
polymers
water

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Poly(p-phenylenevinylene)-based field-effect transistors with platinum source-drain electrodes. / Kayashima, Hiroshi; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo.

In: Journal of Physics D: Applied Physics, Vol. 40, No. 6, 010, 21.03.2007, p. 1646-1648.

Research output: Contribution to journalArticle

Kayashima, Hiroshi ; Yasuda, Takeshi ; Fujita, Katsuhiko ; Tsutsui, Tetsuo. / Poly(p-phenylenevinylene)-based field-effect transistors with platinum source-drain electrodes. In: Journal of Physics D: Applied Physics. 2007 ; Vol. 40, No. 6. pp. 1646-1648.
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