Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)

Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.

    Original languageEnglish
    Title of host publicationSeventh International Conference on Thin Film Physics and Applications
    DOIs
    Publication statusPublished - Mar 30 2011
    Event7th International Conference on Thin Film Physics and Applications - Shanghai, China
    Duration: Sep 24 2010Sep 27 2010

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume7995
    ISSN (Print)0277-786X

    Other

    Other7th International Conference on Thin Film Physics and Applications
    Country/TerritoryChina
    CityShanghai
    Period9/24/109/27/10

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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