Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)

Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.

Original languageEnglish
Title of host publicationSeventh International Conference on Thin Film Physics and Applications
DOIs
Publication statusPublished - Mar 30 2011
Event7th International Conference on Thin Film Physics and Applications - Shanghai, China
Duration: Sep 24 2010Sep 27 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7995
ISSN (Print)0277-786X

Other

Other7th International Conference on Thin Film Physics and Applications
CountryChina
CityShanghai
Period9/24/109/27/10

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Ikoma, Y., Yahaya, H., Sakita, H., Nishino, Y., & Motooka, T. (2011). Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100). In Seventh International Conference on Thin Film Physics and Applications [79951Y] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7995). https://doi.org/10.1117/12.888531