Position-controlled growth of sige crystal grains on insulator by indentation-induced solid-phase crystallization

Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

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1 Citation (Scopus)

Abstract

Indentation-induced solid-phase crystallization (SPC) was proposed to achieve position-controlled crystal growth of Si1-xGex (x: 0-1) on insulating substrates. The results demonstrated that large SiGe grains (>2 μm) over the entire range of Ge fractions were grown at controlled positions without using catalyst metals. In addition, crystal regions were predominantly oriented in the (111) direction for samples with low Ge fractions (<30%), while crystal regions became randomly oriented with increasing Ge fraction (>30%). Although the incubation times of indentation-induced SPC are longer than those of Ni-imprint-induced SPC, indentation-induced SPC is attractive because the crystal grains do not include metals which would degrade the transistor performance.

Original languageEnglish
Article number03B007
JournalJapanese journal of applied physics
Volume48
Issue number3 PART 3
DOIs
Publication statusPublished - Mar 1 2009

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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