POSITRON ANNIHILATION AND RESISTIVITY RECOVERY OF Ni-Si ALLOYS IRRADIATED BY 28 MeV ELECTRONS AT 77 K.

Hideo Watanabe, Hironobu Abe, Eiichi Kuramoto, Naoaki Yoshida

Research output: Contribution to journalArticle

Abstract

It has been recognized that radiation produced point defects interact with solute atoms resulting in micro-segregation or depletion of alloying elements at defect sinks. According to the authors' previous study on Ni-Si alloys by means of high voltage electron microscopy, microstructural and microchemical evolution under the electron irradiation strongly depend on the migration of mixed-dumbbells to the defect sinks. To clarify its mechanism, it is very important to have enough information on basic properties of point defects. The objective of the present study is, therefore, to know the properties of radiation produced point defects in Ni-Si alloys by means of positron annihilation lifetime and electrical resistivity measurement.

Original languageEnglish
Pages (from-to)146-149
Number of pages4
JournalAnnual Reports of the Research Reactor Institute, Kyoto University
Volume20
Publication statusPublished - Dec 1 1987

Fingerprint

Positron annihilation
Point defects
defect
electrical resistivity
Recovery
Radiation
Defects
Electron irradiation
Alloying elements
Electron microscopy
Atoms
electron microscopy
Electric potential
solute
irradiation
electron

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Mechanical Engineering

Cite this

POSITRON ANNIHILATION AND RESISTIVITY RECOVERY OF Ni-Si ALLOYS IRRADIATED BY 28 MeV ELECTRONS AT 77 K. / Watanabe, Hideo; Abe, Hironobu; Kuramoto, Eiichi; Yoshida, Naoaki.

In: Annual Reports of the Research Reactor Institute, Kyoto University, Vol. 20, 01.12.1987, p. 146-149.

Research output: Contribution to journalArticle

@article{5ed0ec32c09e47deb2434b4768564a97,
title = "POSITRON ANNIHILATION AND RESISTIVITY RECOVERY OF Ni-Si ALLOYS IRRADIATED BY 28 MeV ELECTRONS AT 77 K.",
abstract = "It has been recognized that radiation produced point defects interact with solute atoms resulting in micro-segregation or depletion of alloying elements at defect sinks. According to the authors' previous study on Ni-Si alloys by means of high voltage electron microscopy, microstructural and microchemical evolution under the electron irradiation strongly depend on the migration of mixed-dumbbells to the defect sinks. To clarify its mechanism, it is very important to have enough information on basic properties of point defects. The objective of the present study is, therefore, to know the properties of radiation produced point defects in Ni-Si alloys by means of positron annihilation lifetime and electrical resistivity measurement.",
author = "Hideo Watanabe and Hironobu Abe and Eiichi Kuramoto and Naoaki Yoshida",
year = "1987",
month = "12",
day = "1",
language = "English",
volume = "20",
pages = "146--149",
journal = "Annual Reports of the Research Reactor Institute, Kyoto University",
issn = "0454-9244",

}

TY - JOUR

T1 - POSITRON ANNIHILATION AND RESISTIVITY RECOVERY OF Ni-Si ALLOYS IRRADIATED BY 28 MeV ELECTRONS AT 77 K.

AU - Watanabe, Hideo

AU - Abe, Hironobu

AU - Kuramoto, Eiichi

AU - Yoshida, Naoaki

PY - 1987/12/1

Y1 - 1987/12/1

N2 - It has been recognized that radiation produced point defects interact with solute atoms resulting in micro-segregation or depletion of alloying elements at defect sinks. According to the authors' previous study on Ni-Si alloys by means of high voltage electron microscopy, microstructural and microchemical evolution under the electron irradiation strongly depend on the migration of mixed-dumbbells to the defect sinks. To clarify its mechanism, it is very important to have enough information on basic properties of point defects. The objective of the present study is, therefore, to know the properties of radiation produced point defects in Ni-Si alloys by means of positron annihilation lifetime and electrical resistivity measurement.

AB - It has been recognized that radiation produced point defects interact with solute atoms resulting in micro-segregation or depletion of alloying elements at defect sinks. According to the authors' previous study on Ni-Si alloys by means of high voltage electron microscopy, microstructural and microchemical evolution under the electron irradiation strongly depend on the migration of mixed-dumbbells to the defect sinks. To clarify its mechanism, it is very important to have enough information on basic properties of point defects. The objective of the present study is, therefore, to know the properties of radiation produced point defects in Ni-Si alloys by means of positron annihilation lifetime and electrical resistivity measurement.

UR - http://www.scopus.com/inward/record.url?scp=0023569424&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023569424&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0023569424

VL - 20

SP - 146

EP - 149

JO - Annual Reports of the Research Reactor Institute, Kyoto University

JF - Annual Reports of the Research Reactor Institute, Kyoto University

SN - 0454-9244

ER -