Possibility of AlN solution growth using Al and Li3N

Yoshihiro Kangawa, Tatsuhito Wakigawa, Koichi Kakimoto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Suitable nitrogen sources for AlN solution growth were examined. From a theoretical viewpoint, it is speculated that Li3N is suitable for AlN solution growth because the free energy of Li3N formation is larger than that of AlN formation. Nitrogen atoms seem to be transferred from Li3N to Al to form AlN. We performed AlN solution growth using Al and Li3N under an atmospheric pressure of N2. We confirmed the formation of AlN by X-ray diffraction measurement and Raman spectroscopy.

Original languageEnglish
Pages (from-to)5785-5787
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number9 A
DOIs
Publication statusPublished - Sep 7 2007

Fingerprint

Nitrogen
nitrogen atoms
Free energy
Atmospheric pressure
Raman spectroscopy
atmospheric pressure
free energy
nitrogen
X ray diffraction
Atoms
diffraction
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Possibility of AlN solution growth using Al and Li3N. / Kangawa, Yoshihiro; Wakigawa, Tatsuhito; Kakimoto, Koichi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 9 A, 07.09.2007, p. 5785-5787.

Research output: Contribution to journalArticle

@article{10a7de97d9584bc29edeb4187fac767d,
title = "Possibility of AlN solution growth using Al and Li3N",
abstract = "Suitable nitrogen sources for AlN solution growth were examined. From a theoretical viewpoint, it is speculated that Li3N is suitable for AlN solution growth because the free energy of Li3N formation is larger than that of AlN formation. Nitrogen atoms seem to be transferred from Li3N to Al to form AlN. We performed AlN solution growth using Al and Li3N under an atmospheric pressure of N2. We confirmed the formation of AlN by X-ray diffraction measurement and Raman spectroscopy.",
author = "Yoshihiro Kangawa and Tatsuhito Wakigawa and Koichi Kakimoto",
year = "2007",
month = "9",
day = "7",
doi = "10.1143/JJAP.46.5785",
language = "English",
volume = "46",
pages = "5785--5787",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "9 A",

}

TY - JOUR

T1 - Possibility of AlN solution growth using Al and Li3N

AU - Kangawa, Yoshihiro

AU - Wakigawa, Tatsuhito

AU - Kakimoto, Koichi

PY - 2007/9/7

Y1 - 2007/9/7

N2 - Suitable nitrogen sources for AlN solution growth were examined. From a theoretical viewpoint, it is speculated that Li3N is suitable for AlN solution growth because the free energy of Li3N formation is larger than that of AlN formation. Nitrogen atoms seem to be transferred from Li3N to Al to form AlN. We performed AlN solution growth using Al and Li3N under an atmospheric pressure of N2. We confirmed the formation of AlN by X-ray diffraction measurement and Raman spectroscopy.

AB - Suitable nitrogen sources for AlN solution growth were examined. From a theoretical viewpoint, it is speculated that Li3N is suitable for AlN solution growth because the free energy of Li3N formation is larger than that of AlN formation. Nitrogen atoms seem to be transferred from Li3N to Al to form AlN. We performed AlN solution growth using Al and Li3N under an atmospheric pressure of N2. We confirmed the formation of AlN by X-ray diffraction measurement and Raman spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=34548775970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548775970&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.5785

DO - 10.1143/JJAP.46.5785

M3 - Article

AN - SCOPUS:34548775970

VL - 46

SP - 5785

EP - 5787

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 A

ER -