Possibility of AlN vapor phase epitaxy using Al and Li3N as source materials was investigated. Grown product on sapphire substrate was identified by XRD and Micro-Raman measurements. The results suggest that AlON was formed under Li-N-rich condition though AlN was formed under Al-rich condition. This is because Li3N corroded surface of sapphire and oxygen, which is a constituent element of substrate, was incorporated in the product. Moreover, it is found that AlN nano-wire was formed when excessive Al was supplied during growth. These results imply that it is possible to grow AlN by choosing proper conditions especially Li-N/Al ratio.
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Issue number||SUPPL. 2|
|Publication status||Published - Jul 2009|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics