Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Possibility of AlN vapor phase epitaxy using Al and Li3N as source materials was investigated. Grown product on sapphire substrate was identified by XRD and Micro-Raman measurements. The results suggest that AlON was formed under Li-N-rich condition though AlN was formed under Al-rich condition. This is because Li3N corroded surface of sapphire and oxygen, which is a constituent element of substrate, was incorporated in the product. Moreover, it is found that AlN nano-wire was formed when excessive Al was supplied during growth. These results imply that it is possible to grow AlN by choosing proper conditions especially Li-N/Al ratio.

Original languageEnglish
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue numberSUPPL. 2
DOIs
Publication statusPublished - Jul 1 2009

Fingerprint

vapor phase epitaxy
nitrogen
sapphire
products
wire
oxygen

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

@article{80c6003036fa45bb9e9b97d11963c854,
title = "Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source",
abstract = "Possibility of AlN vapor phase epitaxy using Al and Li3N as source materials was investigated. Grown product on sapphire substrate was identified by XRD and Micro-Raman measurements. The results suggest that AlON was formed under Li-N-rich condition though AlN was formed under Al-rich condition. This is because Li3N corroded surface of sapphire and oxygen, which is a constituent element of substrate, was incorporated in the product. Moreover, it is found that AlN nano-wire was formed when excessive Al was supplied during growth. These results imply that it is possible to grow AlN by choosing proper conditions especially Li-N/Al ratio.",
author = "Yoshihiro Kangawa and T. Nagano and Koichi Kakimoto",
year = "2009",
month = "7",
day = "1",
doi = "10.1002/pssc.200880910",
language = "English",
volume = "6",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "SUPPL. 2",

}

TY - JOUR

T1 - Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source

AU - Kangawa, Yoshihiro

AU - Nagano, T.

AU - Kakimoto, Koichi

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Possibility of AlN vapor phase epitaxy using Al and Li3N as source materials was investigated. Grown product on sapphire substrate was identified by XRD and Micro-Raman measurements. The results suggest that AlON was formed under Li-N-rich condition though AlN was formed under Al-rich condition. This is because Li3N corroded surface of sapphire and oxygen, which is a constituent element of substrate, was incorporated in the product. Moreover, it is found that AlN nano-wire was formed when excessive Al was supplied during growth. These results imply that it is possible to grow AlN by choosing proper conditions especially Li-N/Al ratio.

AB - Possibility of AlN vapor phase epitaxy using Al and Li3N as source materials was investigated. Grown product on sapphire substrate was identified by XRD and Micro-Raman measurements. The results suggest that AlON was formed under Li-N-rich condition though AlN was formed under Al-rich condition. This is because Li3N corroded surface of sapphire and oxygen, which is a constituent element of substrate, was incorporated in the product. Moreover, it is found that AlN nano-wire was formed when excessive Al was supplied during growth. These results imply that it is possible to grow AlN by choosing proper conditions especially Li-N/Al ratio.

UR - http://www.scopus.com/inward/record.url?scp=79251609782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79251609782&partnerID=8YFLogxK

U2 - 10.1002/pssc.200880910

DO - 10.1002/pssc.200880910

M3 - Article

AN - SCOPUS:79251609782

VL - 6

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - SUPPL. 2

ER -