Abstract
A Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si1-xGex/Si single quantum well (SQW) layer by 'hybrid' Si molecular beam epitaxy (MBE). The 'hybrid' MBE was performed by growing the Si contact layer in a solid-source MBE chamber after transferring the sample through air from a gas-source MBE (GSMBE) chamber in which the starting SQW layer was initially grown by using disilane (Si2H6) and germane (GeH4). The growth characteristics of the hybrid MBE were investigated by in situ monitoring of the reflection high energy electron diffraction. A (2×1) reconstruction was observed even after the sample was exposed to air for up to 15 h on a GSMBE-prepared Si(100) surface. Evidence of the excellent quality of the EL device was provided by the sharpest emission lines, a full width at half maximum of ≈5.5 meV. The spectra features of the EL and photoluminescence were found to be almost identical, and a well-resolved acoustic phonon replica was observed. Linear polarization for a no-phonon replica of EL was also observed along SQW plane.
| Original language | English |
|---|---|
| Pages (from-to) | 111-117 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 1 1995 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Postgrowth of a Si contact layer on an air-exposed Si1-xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device. / Kato, Yoshimine; Fukatsu, S.; Shiraki, Y.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 1, 01.01.1995, p. 111-117.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Postgrowth of a Si contact layer on an air-exposed Si1-xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device
AU - Kato, Yoshimine
AU - Fukatsu, S.
AU - Shiraki, Y.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - A Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si1-xGex/Si single quantum well (SQW) layer by 'hybrid' Si molecular beam epitaxy (MBE). The 'hybrid' MBE was performed by growing the Si contact layer in a solid-source MBE chamber after transferring the sample through air from a gas-source MBE (GSMBE) chamber in which the starting SQW layer was initially grown by using disilane (Si2H6) and germane (GeH4). The growth characteristics of the hybrid MBE were investigated by in situ monitoring of the reflection high energy electron diffraction. A (2×1) reconstruction was observed even after the sample was exposed to air for up to 15 h on a GSMBE-prepared Si(100) surface. Evidence of the excellent quality of the EL device was provided by the sharpest emission lines, a full width at half maximum of ≈5.5 meV. The spectra features of the EL and photoluminescence were found to be almost identical, and a well-resolved acoustic phonon replica was observed. Linear polarization for a no-phonon replica of EL was also observed along SQW plane.
AB - A Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si1-xGex/Si single quantum well (SQW) layer by 'hybrid' Si molecular beam epitaxy (MBE). The 'hybrid' MBE was performed by growing the Si contact layer in a solid-source MBE chamber after transferring the sample through air from a gas-source MBE (GSMBE) chamber in which the starting SQW layer was initially grown by using disilane (Si2H6) and germane (GeH4). The growth characteristics of the hybrid MBE were investigated by in situ monitoring of the reflection high energy electron diffraction. A (2×1) reconstruction was observed even after the sample was exposed to air for up to 15 h on a GSMBE-prepared Si(100) surface. Evidence of the excellent quality of the EL device was provided by the sharpest emission lines, a full width at half maximum of ≈5.5 meV. The spectra features of the EL and photoluminescence were found to be almost identical, and a well-resolved acoustic phonon replica was observed. Linear polarization for a no-phonon replica of EL was also observed along SQW plane.
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UR - http://www.scopus.com/inward/citedby.url?scp=0029207367&partnerID=8YFLogxK
U2 - 10.1116/1.588002
DO - 10.1116/1.588002
M3 - Article
AN - SCOPUS:0029207367
VL - 13
SP - 111
EP - 117
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 0734-211X
IS - 1
ER -