Postgrowth of a Si contact layer on an air-exposed Si1-xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device

Yoshimine Kato, S. Fukatsu, Y. Shiraki

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si1-xGex/Si single quantum well (SQW) layer by 'hybrid' Si molecular beam epitaxy (MBE). The 'hybrid' MBE was performed by growing the Si contact layer in a solid-source MBE chamber after transferring the sample through air from a gas-source MBE (GSMBE) chamber in which the starting SQW layer was initially grown by using disilane (Si2H6) and germane (GeH4). The growth characteristics of the hybrid MBE were investigated by in situ monitoring of the reflection high energy electron diffraction. A (2×1) reconstruction was observed even after the sample was exposed to air for up to 15 h on a GSMBE-prepared Si(100) surface. Evidence of the excellent quality of the EL device was provided by the sharpest emission lines, a full width at half maximum of ≈5.5 meV. The spectra features of the EL and photoluminescence were found to be almost identical, and a well-resolved acoustic phonon replica was observed. Linear polarization for a no-phonon replica of EL was also observed along SQW plane.

Original languageEnglish
Pages (from-to)111-117
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number1
DOIs
Publication statusPublished - Jan 1 1995
Externally publishedYes

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Gas source molecular beam epitaxy
Luminescent devices
Molecular beam epitaxy
Contacts (fluid mechanics)
Semiconductor quantum wells
Air
Reflection high energy electron diffraction
Full width at half maximum
Photoluminescence
Diodes
Acoustics
Polarization
Monitoring
Gases

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Postgrowth of a Si contact layer on an air-exposed Si1-xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device",
abstract = "A Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si1-xGex/Si single quantum well (SQW) layer by 'hybrid' Si molecular beam epitaxy (MBE). The 'hybrid' MBE was performed by growing the Si contact layer in a solid-source MBE chamber after transferring the sample through air from a gas-source MBE (GSMBE) chamber in which the starting SQW layer was initially grown by using disilane (Si2H6) and germane (GeH4). The growth characteristics of the hybrid MBE were investigated by in situ monitoring of the reflection high energy electron diffraction. A (2×1) reconstruction was observed even after the sample was exposed to air for up to 15 h on a GSMBE-prepared Si(100) surface. Evidence of the excellent quality of the EL device was provided by the sharpest emission lines, a full width at half maximum of ≈5.5 meV. The spectra features of the EL and photoluminescence were found to be almost identical, and a well-resolved acoustic phonon replica was observed. Linear polarization for a no-phonon replica of EL was also observed along SQW plane.",
author = "Yoshimine Kato and S. Fukatsu and Y. Shiraki",
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AU - Fukatsu, S.

AU - Shiraki, Y.

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N2 - A Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si1-xGex/Si single quantum well (SQW) layer by 'hybrid' Si molecular beam epitaxy (MBE). The 'hybrid' MBE was performed by growing the Si contact layer in a solid-source MBE chamber after transferring the sample through air from a gas-source MBE (GSMBE) chamber in which the starting SQW layer was initially grown by using disilane (Si2H6) and germane (GeH4). The growth characteristics of the hybrid MBE were investigated by in situ monitoring of the reflection high energy electron diffraction. A (2×1) reconstruction was observed even after the sample was exposed to air for up to 15 h on a GSMBE-prepared Si(100) surface. Evidence of the excellent quality of the EL device was provided by the sharpest emission lines, a full width at half maximum of ≈5.5 meV. The spectra features of the EL and photoluminescence were found to be almost identical, and a well-resolved acoustic phonon replica was observed. Linear polarization for a no-phonon replica of EL was also observed along SQW plane.

AB - A Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si1-xGex/Si single quantum well (SQW) layer by 'hybrid' Si molecular beam epitaxy (MBE). The 'hybrid' MBE was performed by growing the Si contact layer in a solid-source MBE chamber after transferring the sample through air from a gas-source MBE (GSMBE) chamber in which the starting SQW layer was initially grown by using disilane (Si2H6) and germane (GeH4). The growth characteristics of the hybrid MBE were investigated by in situ monitoring of the reflection high energy electron diffraction. A (2×1) reconstruction was observed even after the sample was exposed to air for up to 15 h on a GSMBE-prepared Si(100) surface. Evidence of the excellent quality of the EL device was provided by the sharpest emission lines, a full width at half maximum of ≈5.5 meV. The spectra features of the EL and photoluminescence were found to be almost identical, and a well-resolved acoustic phonon replica was observed. Linear polarization for a no-phonon replica of EL was also observed along SQW plane.

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