Postgrowth of a Si contact layer on an air-exposed Si1-xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device

Yoshimine Kato, S. Fukatsu, Y. Shiraki

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Postgrowth of a Si contact layer on an air-exposed Si<sub>1-x</sub>Ge<sub>x</sub>/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy