Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

Hiroshi Nakashima, Yoshiaki Iwamura, Keita Sakamoto, Dong Wang, Kana Hirayama, Keisuke Yamamoto, Haigui Yang

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20 Citations (Scopus)

Abstract

The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.

Original languageEnglish
Article number252102
JournalApplied Physics Letters
Volume98
Issue number25
DOIs
Publication statusPublished - Jun 20 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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