Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

Hiroshi Nakashima; Yoshiaki Iwamura; Keita Sakamoto; Dong Wang; Kana Hirayama; Keisuke Yamamoto; Haigui Yang

doi:10.1063/1.3601480

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO₂ / GeO₂ bilayer passivation

Hiroshi Nakashima, Yoshiaki Iwamura, Keita Sakamoto, Dong Wang, Kana Hirayama, Keisuke Yamamoto, Haigui Yang

Energy Engineering Sciences

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO _c2 / GeO₂ bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO₂ / GeO₂ interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO₂ / GeO₂ interface and/or in the GeO₂ interlayer.

Original language	English
Article number	252102
Journal	Applied Physics Letters
Volume	98
Issue number	25
DOIs	https://doi.org/10.1063/1.3601480
Publication status	Published - Jun 20 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3601480

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title = "Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation",

abstract = "The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.",

author = "Hiroshi Nakashima and Yoshiaki Iwamura and Keita Sakamoto and Dong Wang and Kana Hirayama and Keisuke Yamamoto and Haigui Yang",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research (Grant No. 21246054) from the MEXT.",

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T1 - Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

AU - Nakashima, Hiroshi

AU - Iwamura, Yoshiaki

AU - Sakamoto, Keita

AU - Wang, Dong

AU - Hirayama, Kana

AU - Yamamoto, Keisuke

AU - Yang, Haigui

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research (Grant No. 21246054) from the MEXT.

PY - 2011/6/20

Y1 - 2011/6/20

N2 - The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.

AB - The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.

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Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO₂ / GeO₂ bilayer passivation

Abstract

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