Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

Hiroshi Nakashima, Yoshiaki Iwamura, Keita Sakamoto, Dong Wang, Kana Hirayama, Keisuke Yamamoto, Haigui Yang

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20 Citations (Scopus)

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Physics & Astronomy