Potential Influence of Surface Atomic Disorder on Fermi-level Pinning at Metal/SiGe Interface

X. Luo, T. Nishimura, T. Yajima, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Schottky barrier heights (SBH) at metal/n-Si0.55Ge0.45 Schottky interface are reported as a function of work function of metals. In comparison of the pinning strength with metal/Si and metal/Ge, the result shows that a large amount of disorders and defects on SiGe do not have a significant effect on the Fermi level pinning (FLP), which may suggest that the intrinsic instead of extrinsic mechanism should be considered for the dominant mechanism of Fermi level pinning not only at metal/SiGe but also at metal/Si and Ge systems.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages47-49
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - Jul 26 2018
Externally publishedYes
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: Mar 13 2018Mar 16 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period3/13/183/16/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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