Prediction of a threshold density of atomic hydrogen for nanocrystalline diamond growth at low pressures

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Abstract

A lower-threshold density of atomic hydrogen (H) for nanocrystalline diamond growth in inductively coupled plasma has been examined. Vacuum-ultraviolet absorption spectroscopy was employed to measure the absolute H density in low-pressure conditions below 10.6 Pa, where nanocrystalline diamond films with grain sizes of ∼20 nm showing a distinct diamond peak in the Raman spectra were deposited. A mechanistic explanation for the growth limitation was made by comparing kinetic rates of incorporation and desorption of adsorbed methyl radicals as principal growth precursors. The results predict a threshold H density for net diamond growth of the order of 1012 cm-3.

Original languageEnglish
Pages (from-to)251-254
Number of pages4
JournalChemical Physics Letters
Volume389
Issue number4-6
DOIs
Publication statusPublished - May 11 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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