Prediction of a threshold density of atomic hydrogen for nanocrystalline diamond growth at low pressures

Research output: Contribution to journalArticle

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Abstract

A lower-threshold density of atomic hydrogen (H) for nanocrystalline diamond growth in inductively coupled plasma has been examined. Vacuum-ultraviolet absorption spectroscopy was employed to measure the absolute H density in low-pressure conditions below 10.6 Pa, where nanocrystalline diamond films with grain sizes of ∼20 nm showing a distinct diamond peak in the Raman spectra were deposited. A mechanistic explanation for the growth limitation was made by comparing kinetic rates of incorporation and desorption of adsorbed methyl radicals as principal growth precursors. The results predict a threshold H density for net diamond growth of the order of 1012 cm-3.

Original languageEnglish
Pages (from-to)251-254
Number of pages4
JournalChemical Physics Letters
Volume389
Issue number4-6
DOIs
Publication statusPublished - May 11 2004

Fingerprint

Diamond
Hydrogen
low pressure
diamonds
thresholds
hydrogen
predictions
ultraviolet absorption
Diamond films
ultraviolet spectroscopy
Inductively coupled plasma
Ultraviolet spectroscopy
diamond films
Absorption spectroscopy
Raman scattering
Desorption
absorption spectroscopy
grain size
desorption
Vacuum

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Prediction of a threshold density of atomic hydrogen for nanocrystalline diamond growth at low pressures. / Tsutsui, Kungen.

In: Chemical Physics Letters, Vol. 389, No. 4-6, 11.05.2004, p. 251-254.

Research output: Contribution to journalArticle

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