Abstract
The lowest temperature for c-axis preferred oriented thin film growth is investigated for films on different substrate materials. This temperature has a maximum when the lattice constant of the substrate matches that of YBa 2Cu3Ox. This result readily explains a-axis preferred oriented film growth by the template technique. We propose quasilattice-match engineering as a technique for controlling the preferential orientation axis of a part of a YBa2Cu3Ox thin film by using a seed layer whose lattice mismatch differs from that of the substrate. The part of the YBa2Cu3Ox thin film on a PrGaO3 seed layer is a-axis oriented and the film directly deposited on a SrTiO3 substrate is c-axis oriented.
Original language | English |
---|---|
Pages (from-to) | 1209-1212 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 74 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1993 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)