Abstract
The lowest temperature for c-axis preferred oriented thin film growth is investigated for films on different substrate materials. This temperature has a maximum when the lattice constant of the substrate matches that of YBa 2Cu3Ox. This result readily explains a-axis preferred oriented film growth by the template technique. We propose quasilattice-match engineering as a technique for controlling the preferential orientation axis of a part of a YBa2Cu3Ox thin film by using a seed layer whose lattice mismatch differs from that of the substrate. The part of the YBa2Cu3Ox thin film on a PrGaO3 seed layer is a-axis oriented and the film directly deposited on a SrTiO3 substrate is c-axis oriented.
| Original language | English |
|---|---|
| Pages (from-to) | 1209-1212 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 74 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1993 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Preferential axis control of YBa2Cu3Ox thin film by quasilattice-match engineering. / Mukaida, Masashi; Miyazawa, Shintaro.
In: Journal of Applied Physics, Vol. 74, No. 2, 1993, p. 1209-1212.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Preferential axis control of YBa2Cu3Ox thin film by quasilattice-match engineering
AU - Mukaida, Masashi
AU - Miyazawa, Shintaro
PY - 1993
Y1 - 1993
N2 - The lowest temperature for c-axis preferred oriented thin film growth is investigated for films on different substrate materials. This temperature has a maximum when the lattice constant of the substrate matches that of YBa 2Cu3Ox. This result readily explains a-axis preferred oriented film growth by the template technique. We propose quasilattice-match engineering as a technique for controlling the preferential orientation axis of a part of a YBa2Cu3Ox thin film by using a seed layer whose lattice mismatch differs from that of the substrate. The part of the YBa2Cu3Ox thin film on a PrGaO3 seed layer is a-axis oriented and the film directly deposited on a SrTiO3 substrate is c-axis oriented.
AB - The lowest temperature for c-axis preferred oriented thin film growth is investigated for films on different substrate materials. This temperature has a maximum when the lattice constant of the substrate matches that of YBa 2Cu3Ox. This result readily explains a-axis preferred oriented film growth by the template technique. We propose quasilattice-match engineering as a technique for controlling the preferential orientation axis of a part of a YBa2Cu3Ox thin film by using a seed layer whose lattice mismatch differs from that of the substrate. The part of the YBa2Cu3Ox thin film on a PrGaO3 seed layer is a-axis oriented and the film directly deposited on a SrTiO3 substrate is c-axis oriented.
UR - http://www.scopus.com/inward/record.url?scp=0042641520&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0042641520&partnerID=8YFLogxK
U2 - 10.1063/1.354923
DO - 10.1063/1.354923
M3 - Article
AN - SCOPUS:0042641520
VL - 74
SP - 1209
EP - 1212
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
ER -