Preliminary Study on Laser Annealed NP Junction in Phosphorus Implanted Germanium

Siti Rahmah Aid, Nur Nadhirah Mohd Rashid, Nur Farhana Arissa Jonny, Anthony Centeno, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One option in enhancing metal-oxide-semiconductor transistor devices is by replacing silicon with high-mobility material of germanium. However, fabrication of Ge np junction faces low dopant activation problem due to the interaction between dopant and defect that was originated from ion implantation, during thermal annealing process results in dopant deactivation. Eventually, series resistance of np junction between source and drain regions will increase and affect the device drive current. Therefore, minimizing junction resistance remains an important issue to be solved. In this work, ultrafast/high temperature excimer laser of KrF was adopted for post-implantation annealing process in order to achieve high activation level. Laser energy fluences and shot numbers were varied between 100-2000 mJ/cm2 and 1-1000 shots, respectively to investigate the influence of laser parameter to the np junction resistance value, surface morphology and recrystallization. It is found that resistance lower than 300 Ω can be obtained when annealing the substrate between 500-1000 mJ/cm2 with shot number up to two. Taking into consideration on the morphological and structural analyses leads to the conclusion that an optimum parameter for LTA in the sample implanted with phosphorus at higher energy/dose concentration of 40 keV/6.0×1014 cm-2 is 700 mJ/cm2, with shot number of two.

Original languageEnglish
Title of host publicationProceedings - 2020 IEEE International Conference on Semiconductor Electronics, ICSE 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages152-155
Number of pages4
ISBN (Electronic)9781728159676
DOIs
Publication statusPublished - Jul 2020
Event14th IEEE International Conference on Semiconductor Electronics, ICSE 2020 - Kuala Lumpur, Malaysia
Duration: Jul 28 2020Jul 29 2020

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Volume2020-July

Conference

Conference14th IEEE International Conference on Semiconductor Electronics, ICSE 2020
Country/TerritoryMalaysia
CityKuala Lumpur
Period7/28/207/29/20

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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