Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

K. Ishikawa, T. Sakai, T. Watanabe, H. Funakubo

Research output: Contribution to journalConference article

Abstract

Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.

Original languageEnglish
Pages (from-to)189-192
Number of pages4
JournalKey Engineering Materials
Volume214-215
Publication statusPublished - Jan 1 2002
Externally publishedYes
Event1st Asian Meeting of Electroceramics - Kawasaki, Japan
Duration: Oct 26 2000Oct 27 2000

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Epitaxial films
Metallorganic chemical vapor deposition
Thin films
Ferroelectricity
Lattice mismatch
Remanence
Substrates
Leakage currents
Permittivity
Temperature
strontium titanium oxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition. / Ishikawa, K.; Sakai, T.; Watanabe, T.; Funakubo, H.

In: Key Engineering Materials, Vol. 214-215, 01.01.2002, p. 189-192.

Research output: Contribution to journalConference article

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AU - Sakai, T.

AU - Watanabe, T.

AU - Funakubo, H.

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